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	P-type zn1-xmgxo films with sb doping by radio-frequency magnetron sputtering
	Wang, Peng; Chen, Nuofu; Yin, Zhigang; Dai, Ruixuan; Bai, Yiming
刊名	Applied physics letters
	2006-11-13
卷号	89期号:20页码:3
ISSN号	0003-6951
DOI	10.1063/1.2388254
通讯作者	Wang, peng(pwang@semi.ac.cn)
英文摘要	Sb-doped zn1-xmgxo films were grown on c-plane sapphire substrates by radio-frequency magnetron sputtering. the p-type conduction of the films (0.05 <= x <= 0.13) was confirmed by hall measurements, revealing a hole concentration of 10(15)-10(16) cm(-3) and a mobility of 0.6-4.5 cm(2)/v s. a p-n homojunction comprising an undoped zno layer and an sb-doped zn0.95mg0.05o layer shows a typical rectifying characteristic. sb-doped p-type zn1-xmgxo films also exhibit a changeable wider band gap as a function of x, implying that they can probably be used for fabrication of zno-based quantum wells and ultraviolet optoelectronic devices. (c) 2006 american institute of physics.
WOS关键词	ZNO THIN-FILMS ; MGXZN1-XO ; DEVICES ; ALLOY
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000242100200036
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426641
专题	半导体研究所
通讯作者	Wang, Peng
作者单位	1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Mech, Natl Lab Micrograv, Beijing 100080, Peoples R China
推荐引用方式 GB/T 7714	Wang, Peng,Chen, Nuofu,Yin, Zhigang,et al. P-type zn1-xmgxo films with sb doping by radio-frequency magnetron sputtering[J]. Applied physics letters,2006,89(20):3.
APA	Wang, Peng,Chen, Nuofu,Yin, Zhigang,Dai, Ruixuan,&Bai, Yiming.(2006).P-type zn1-xmgxo films with sb doping by radio-frequency magnetron sputtering.Applied physics letters,89(20),3.
MLA	Wang, Peng,et al."P-type zn1-xmgxo films with sb doping by radio-frequency magnetron sputtering".Applied physics letters 89.20(2006):3.

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