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	High-quality multiple quantum wells selectively grown on taper-patterned substrates by ultra-low-pressure mocvd
	Zhao, Q; Pan, JQ; Zhang, J; Zhou, F; Wang, BJ; Wang, LF; Bian, J; An, X; Zhao, LJ; Wang, W
刊名	Acta physica sinica
	2006-06-01
卷号	55期号:6页码:2982-2985
关键词	Ultra-low-pressure Selective area growth Tapered mask
ISSN号	1000-3290
通讯作者	Zhao, q(qzhao@red.semi.ac.cn)
英文摘要	High quality ingaasp/ingaasp multiple quantum wells ( mqws) have been selectively grown by ultra-low-pressure (22 mbar) metal-organic chemical vapor deposition. a large bandgap energy shift of 46 nm and photoluminescence with fwhm less than 30 mev were obtained with a rather small mask width variation (15-30 mu m). in order to study the uniformity of the mqws grown in the selective area, novel tapered masks were employed, and the transition effect w the tapered region was also studied. the energy detuning of the tapered region was observed to be saturated at larger ratios of the mask width to the tapered region length.
WOS关键词	BANDGAP ENERGY CONTROL ; INTEGRATED DFB LASER ; EPITAXY
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
语种	英语
出版者	CHINESE PHYSICAL SOC
WOS记录号	WOS:000238168500055
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426623
专题	半导体研究所
通讯作者	Zhao, Q
作者单位	Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhao, Q,Pan, JQ,Zhang, J,et al. High-quality multiple quantum wells selectively grown on taper-patterned substrates by ultra-low-pressure mocvd[J]. Acta physica sinica,2006,55(6):2982-2985.
APA	Zhao, Q.,Pan, JQ.,Zhang, J.,Zhou, F.,Wang, BJ.,...&Wang, W.(2006).High-quality multiple quantum wells selectively grown on taper-patterned substrates by ultra-low-pressure mocvd.Acta physica sinica,55(6),2982-2985.
MLA	Zhao, Q,et al."High-quality multiple quantum wells selectively grown on taper-patterned substrates by ultra-low-pressure mocvd".Acta physica sinica 55.6(2006):2982-2985.

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