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	Strain analysis of inp/ingaasp wafer bonded on si by x-ray double crystalline diffraction
	Zhao, Hong-Quan; Yu, Li-Juan; Huang, Yong-Zhen; Wang, Yu-Tian
刊名	Materials science and engineering b-solid state materials for advanced technology
	2006-08-25
卷号	133期号:1-3页码:117-123
关键词	Inp Si X-ray double crystalline diffraction Thermal strain Wafer bonding
ISSN号	0921-5107
DOI	10.1016/j.mseb.2006.06.009
通讯作者	Zhao, hong-quan(zhggeneral@red.semi.ac.cn)
英文摘要	Wafer bonding between p-si and an n-inp-based ingaasp multiple quantum well (mqw) wafer was achieved by a direct wafer bonding method. in order to investigate the strain at different annealing temperatures, four pre-bonded pairs were selected, and pair one was annealed at 150 degrees c, pair two at 250 degrees c, pair three at 350 degrees c, and pair four at 450 degrees c, respectively. the macroscopical strains on the bonded epitaxial layer include two parts, namely the internal strain and the strain caused by the mismatching of the crystalline orientation between inp (100) and si (100). these strains were measured by the x-ray double crystalline diffraction, and theoretical calculations of the longitudinal and perpendicular thermal strains at different annealing temperatures were calculated using the bi-metal thermostats model, both the internal strain and the thermal strain increase with the annealing temperature. normal thermal stress and the elastic biaxial thermal strain energy were also calculated using this model. (c) 2006 elsevier b.v. all rights reserved.
WOS关键词	OPTOELECTRONIC DEVICES ; EPITAXIAL OVERGROWTHS ; TEMPERATURE ; INTERFACE ; STRESSES ; VCSELS ; SURFACES ; ENERGY
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Condensed Matter
语种	英语
出版者	ELSEVIER SCIENCE SA
WOS记录号	WOS:000240633500021
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426558
专题	半导体研究所
通讯作者	Zhao, Hong-Quan
作者单位	Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhao, Hong-Quan,Yu, Li-Juan,Huang, Yong-Zhen,et al. Strain analysis of inp/ingaasp wafer bonded on si by x-ray double crystalline diffraction[J]. Materials science and engineering b-solid state materials for advanced technology,2006,133(1-3):117-123.
APA	Zhao, Hong-Quan,Yu, Li-Juan,Huang, Yong-Zhen,&Wang, Yu-Tian.(2006).Strain analysis of inp/ingaasp wafer bonded on si by x-ray double crystalline diffraction.Materials science and engineering b-solid state materials for advanced technology,133(1-3),117-123.
MLA	Zhao, Hong-Quan,et al."Strain analysis of inp/ingaasp wafer bonded on si by x-ray double crystalline diffraction".Materials science and engineering b-solid state materials for advanced technology 133.1-3(2006):117-123.

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