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	Theoretical analysis of gate voltage-controlled subband states in an alxga1-xn/gan heterostructure
	Han, XX; Li, JM; Wu, JJ; Cong, GW; Liu, XL; Zhu, QS; Wang, ZG
刊名	Physica e-low-dimensional systems & nanostructures
	2005-08-01
卷号	28期号:3页码:230-236
关键词	Two-dimensional electron gas Inter-subband transition Gate voltage
ISSN号	1386-9477
DOI	10.1016/j.physe.2005.03.008
通讯作者	Han, xx(xxhan@red.semi.ac.cn)
英文摘要	The subband structure and inter-subband transition as a function of gate voltage are determined by solving the schrodinger and poisson equations self-consistently in an alxga1-xn/gan heterostructure. different aluminum mole fraction and thickness of alxga1-xn barrier are considered. calculation results show that energy difference between the first and second subband covers a wide range (from several tens to hundreds milli-electron volt) by applying different gate voltage, which corresponds to the midinfrared and long-wave infrared wavelength scope. furthermore, such a modulation on the subband transition energy is much more pronounced for the structure with thin barrier. when the applied positive gate voltage is increased, the triangle well formed at the interface turns to be deeper and narrower, which enhances the confinement for electrons. as a result, the overlap between electron wave function at two subbands increases, and thus the optical intersubband transition also enhances its intensity. this tendency is in good agreement with the available data in the literature. (c) 2005 elsevier b.v. all rights reserved.
WOS关键词	ELECTRON-MOBILITY TRANSISTORS ; FIELD-EFFECT TRANSISTORS ; ALGAN/GAN HETEROSTRUCTURES ; GAS ; POLARIZATION ; DEVICES
WOS研究方向	Science & Technology - Other Topics ; Physics
WOS类目	Nanoscience & Nanotechnology ; Physics, Condensed Matter
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000230627400005
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426541
专题	半导体研究所
通讯作者	Han, XX
作者单位	Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Han, XX,Li, JM,Wu, JJ,et al. Theoretical analysis of gate voltage-controlled subband states in an alxga1-xn/gan heterostructure[J]. Physica e-low-dimensional systems & nanostructures,2005,28(3):230-236.
APA	Han, XX.,Li, JM.,Wu, JJ.,Cong, GW.,Liu, XL.,...&Wang, ZG.(2005).Theoretical analysis of gate voltage-controlled subband states in an alxga1-xn/gan heterostructure.Physica e-low-dimensional systems & nanostructures,28(3),230-236.
MLA	Han, XX,et al."Theoretical analysis of gate voltage-controlled subband states in an alxga1-xn/gan heterostructure".Physica e-low-dimensional systems & nanostructures 28.3(2005):230-236.

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