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	Growth and characterization of inn on sapphire substrate by rf-mbe
	Xiao, HL; Wang, XL; Wang, JX; Zhang, NH; Liu, HX; Zeng, YP; Li, JM; Wang, ZG
刊名	Journal of crystal growth
	2005-04-01
卷号	276期号:3-4页码:401-406
关键词	Photoluminescence Rf-mbe X-ray diffraction Inn
ISSN号	0022-0248
DOI	10.1016/j.jcrysgro.2004.12.001
通讯作者	Xiao, hl(hlxiao@red.semi.ac.cn)
英文摘要	Indium nitride (inn) films were grown on sapphire substrates by radio-frequency plasma-excited molecular beam epitaxy (rf-mbe). atomic force microscopy (afm), reflection high-energy electron diffraction (rheed), double-crystal x-ray diffraction (dcxrd) and photoluminescence (pl) spectroscopy were used to characterize the inn films. the results show that the inn films have good crystallinity, with full-width at half-maximum (fwhm) of inn (0 0 0 2) dcxrd peak being 14 arcmin. at room temperature, a strong pl peak at 0.79ev was observed. at 1.9ev or so, no peak was observed. in addition, it is found that the inn films grown with low-temperature (lt) inn buffer layer are of better quality than those without lt-inn buffer layer. (c) 2004 elsevier b.v. all rights reserved.
WOS关键词	VAPOR-PHASE EPITAXY ; MOLECULAR-BEAM EPITAXY ; FUNDAMENTAL-BAND GAP ; STRUCTURAL-PROPERTIES ; INDIUM NITRIDE ; FILMS
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000228385300010
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426529
专题	半导体研究所
通讯作者	Xiao, HL
作者单位	Chinese Acad Sci, Inst Semicond, Novel Mat Grp, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Xiao, HL,Wang, XL,Wang, JX,et al. Growth and characterization of inn on sapphire substrate by rf-mbe[J]. Journal of crystal growth,2005,276(3-4):401-406.
APA	Xiao, HL.,Wang, XL.,Wang, JX.,Zhang, NH.,Liu, HX.,...&Wang, ZG.(2005).Growth and characterization of inn on sapphire substrate by rf-mbe.Journal of crystal growth,276(3-4),401-406.
MLA	Xiao, HL,et al."Growth and characterization of inn on sapphire substrate by rf-mbe".Journal of crystal growth 276.3-4(2005):401-406.

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