| Growth of a periodic inp-based heteroepitaxial structure for a quantum cascade laser | |
| Guo, Y; Liu, FQ; Liu, JQ; Li, CM; Wang, ZG | |
| 刊名 | Materials letters
 |
| 2005-09-01 | |
| 卷号 | 59期号:22页码:2755-2758 |
| 关键词 | Heteroepitaxial structure Quantum cascade laser Molecular beam epitaxy |
| ISSN号 | 0167-577X |
| DOI | 10.1016/j.matlet.2005.04.023 |
| 通讯作者 | Liu, fq() |
| 英文摘要 | The route to grow inp-based heteroepitaxial structure for quantum cascade laser by molecular beam epitaxy is reported. optimized growth conditions including substrate temperature, v/iii ratio, growth rates, doping levels and interface control are summarized. double crystal xray diffraction and cross-sectional transmission electron microscopy disclose that our grown inp-based heteroepitaxial structure for quantum cascade laser has excellent periodicity and sharp interfaces. (c) 2005 elsevier b.v. all rights reserved. |
| WOS关键词 | ROOM-TEMPERATURE ; OPERATION |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| 出版者 | ELSEVIER SCIENCE BV |
| WOS记录号 | WOS:000230683900008 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2426489 |
| 专题 | 半导体研究所 |
| 通讯作者 | Liu, FQ |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Guo, Y,Liu, FQ,Liu, JQ,et al. Growth of a periodic inp-based heteroepitaxial structure for a quantum cascade laser[J]. Materials letters,2005,59(22):2755-2758. |
| APA | Guo, Y,Liu, FQ,Liu, JQ,Li, CM,&Wang, ZG.(2005).Growth of a periodic inp-based heteroepitaxial structure for a quantum cascade laser.Materials letters,59(22),2755-2758. |
| MLA | Guo, Y,et al."Growth of a periodic inp-based heteroepitaxial structure for a quantum cascade laser".Materials letters 59.22(2005):2755-2758. |
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