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	Monolithic integration of an ingaasp-inp strained dfb laser and an electroabsorption modulator by ultra-low-pressure selective-area-growth mocvd
	Zhao, Q; Pan, JQ; Zhou, F; Wang, BJ; Wang, LF; Wang, W
刊名	Semiconductor science and technology
	2005-06-01
卷号	20期号:6页码:544-547
ISSN号	0268-1242
DOI	10.1088/0268-1242/20/6/011
通讯作者	Zhao, q(qzhao@red.semi.ac.cn)
英文摘要	The design and basic characteristics of a strained ingaasp-inp multiple-quantum-well (mqw) dfb laser monolithically integrated with an electroabsorption modulator (eam) by ultra-low-pressure (22 mbar) selective-area-growth (sag) mocvd are presented. a fundamental study of the controllability and the applicability of band-gap energy by using the sag, method is performed. a large band-gap photoluminescence wavelength shift of 88 mn. was obtained with a small mask width variation (0-30 mu m). the technique is then applied to fabricate a high performance strained mqw eam integrated with a dfb laser. the threshold current of 26 ma at cw operation of the device with dfb laser length of 300 mu m and eam length of 150 mu m has been realized at a modulator bias of 0 v. the devices also exhibit 15 db on/off ratio at an applied bias voltage of 5 v.
WOS关键词	VAPOR-PHASE EPITAXY ; BURIED-HETEROSTRUCTURE ; MOVPE
WOS研究方向	Engineering ; Materials Science ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Condensed Matter
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000230260700012
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426445
专题	半导体研究所
通讯作者	Zhao, Q
作者单位	Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhao, Q,Pan, JQ,Zhou, F,et al. Monolithic integration of an ingaasp-inp strained dfb laser and an electroabsorption modulator by ultra-low-pressure selective-area-growth mocvd[J]. Semiconductor science and technology,2005,20(6):544-547.
APA	Zhao, Q,Pan, JQ,Zhou, F,Wang, BJ,Wang, LF,&Wang, W.(2005).Monolithic integration of an ingaasp-inp strained dfb laser and an electroabsorption modulator by ultra-low-pressure selective-area-growth mocvd.Semiconductor science and technology,20(6),544-547.
MLA	Zhao, Q,et al."Monolithic integration of an ingaasp-inp strained dfb laser and an electroabsorption modulator by ultra-low-pressure selective-area-growth mocvd".Semiconductor science and technology 20.6(2005):544-547.

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