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	Quantum-dot growth simulation on periodic stress of substrate
	Zhao, C; Chen, YH; Cui, CX; Xu, B; Sun, J; Lei, W; Lu, LK; Wang, ZG
刊名	Journal of chemical physics
	2005-09-01
卷号	123期号:9页码:4
ISSN号	0021-9606
DOI	10.1063/1.2006677
通讯作者	Zhao, c(czhao@semi.ac.cn)
英文摘要	Inas quantum dots (qds) are grown on the cleaved edge of an inxga1-xas/gaas supperlattice experimentally and a good linear alignment of these qds on the surface of an inxga1-xas layer has been realized. the modulation effects of periodic strain on the substrate are investigated theoretically using a kinetic monte carlo method. our results show that a good alignment of qds can be achieved when the strain energy reaches 2% of the atomic binding energy. the simulation results are in excellent qualitative agreement with our experiments. (c) 2005 american institute of physics.
WOS关键词	KINETIC MONTE-CARLO ; MOLECULAR-BEAM EPITAXY ; STRAIN ; NUCLEATION ; ISLAND ; SIZE ; EVAPORATION
WOS研究方向	Physics
WOS类目	Physics, Atomic, Molecular & Chemical
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000231737700031
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426433
专题	半导体研究所
通讯作者	Zhao, C
作者单位	Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhao, C,Chen, YH,Cui, CX,et al. Quantum-dot growth simulation on periodic stress of substrate[J]. Journal of chemical physics,2005,123(9):4.
APA	Zhao, C.,Chen, YH.,Cui, CX.,Xu, B.,Sun, J.,...&Wang, ZG.(2005).Quantum-dot growth simulation on periodic stress of substrate.Journal of chemical physics,123(9),4.
MLA	Zhao, C,et al."Quantum-dot growth simulation on periodic stress of substrate".Journal of chemical physics 123.9(2005):4.

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