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	Sulfur-induced exciton localization in te-rich znste alloy
	Yang, XD; Xu, ZY; Sun, Z; Ji, Y; Sun, BQ; Sou, IK; Ge, WK
刊名	Applied physics letters
	2005-04-18
卷号	86期号:16页码:3
ISSN号	0003-6951
DOI	10.1063/1.1906303
通讯作者	Yang, xd(zyxu@red.semi.ac.cn)
英文摘要	Exciton localization in te-rich znste epilayers has been studied by photoluminescence (pl) and time-resolved pl. the sulfur-related exciton emission is found to dominate the radiative recombination at low temperature and is shifted to the low energy with the increase of s concentration. by measuring the pl dependence on temperature and by analyzing the pl decay process, we have clarified the localization nature of the sulfur-related exciton emission. furthermore, the difference of the localization effect in te- and s-rich znste is also compared and discussed. © 2005 american institute of physics.
WOS关键词	QUANTUM-WELLS ; EMISSION ; STATES ; PRESSURE ; SHIFT ; GAAS ; BAND ; ZNTE
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000229040300041
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426369
专题	半导体研究所
通讯作者	Yang, XD
作者单位	1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
推荐引用方式 GB/T 7714	Yang, XD,Xu, ZY,Sun, Z,et al. Sulfur-induced exciton localization in te-rich znste alloy[J]. Applied physics letters,2005,86(16):3.
APA	Yang, XD.,Xu, ZY.,Sun, Z.,Ji, Y.,Sun, BQ.,...&Ge, WK.(2005).Sulfur-induced exciton localization in te-rich znste alloy.Applied physics letters,86(16),3.
MLA	Yang, XD,et al."Sulfur-induced exciton localization in te-rich znste alloy".Applied physics letters 86.16(2005):3.

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