| A novel method for positioning of inas islands on gaas(110) | |
| Cui, CX; Chen, YH; Zhang, CL; Jin, P; Shi, GX; Zhao, C; Xu, B; Wang, ZG | |
| 刊名 | Physica e-low-dimensional systems & nanostructures
 |
| 2005-09-01 | |
| 卷号 | 28期号:4页码:537-544 |
| 关键词 | Inas island Gaas (110) Cleaved edge overgrowth Ingaas/gaas superlattice Mbe |
| ISSN号 | 1386-9477 |
| DOI | 10.1016/j.physe.2005.06.001 |
| 通讯作者 | Chen, yh() |
| 英文摘要 | A novel method for positioning of inas islands on gaas (110) by cleaved edge overgrowth is reported. the first growth sample contains strained inxga1-xas/gaas superlattice (sl) of varying indium fraction, which acts as a strain nanopattern for the cleaved-edge overgrowth. atoms incident on the cleaved edge will preferentially migrate to ingaas regions where favorable bonding sites are available. by this method inas island chains with lateral periodicity defined by the thickness of ingaas and gaas of sl have been realized by molecular beam epitaxy (mbe). they are observed by means of atomic force microscopy (afm). the strain nanopattern's effect is studied by the different indium fraction of sl and mbe growth conditions. (c) 2005 elsevier b.v. all rights reserved. |
| WOS关键词 | INAS/GAAS(110) HETEROEPITAXY ; QUANTUM DOTS ; SURFACE ; GROWTH ; GAAS |
| WOS研究方向 | Science & Technology - Other Topics ; Physics |
| WOS类目 | Nanoscience & Nanotechnology ; Physics, Condensed Matter |
| 语种 | 英语 |
| 出版者 | ELSEVIER SCIENCE BV |
| WOS记录号 | WOS:000232038500028 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2426267 |
| 专题 | 半导体研究所 |
| 通讯作者 | Chen, YH |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Cui, CX,Chen, YH,Zhang, CL,et al. A novel method for positioning of inas islands on gaas(110)[J]. Physica e-low-dimensional systems & nanostructures,2005,28(4):537-544. |
| APA | Cui, CX.,Chen, YH.,Zhang, CL.,Jin, P.,Shi, GX.,...&Wang, ZG.(2005).A novel method for positioning of inas islands on gaas(110).Physica e-low-dimensional systems & nanostructures,28(4),537-544. |
| MLA | Cui, CX,et al."A novel method for positioning of inas islands on gaas(110)".Physica e-low-dimensional systems & nanostructures 28.4(2005):537-544. |
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