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	Electrical properties and electroluminescence of 4h-sic p-n junction diodes
	Sun, GS; Zhang, YX; Gao, X; Wang, L; Zhao, WS; Zeng, YP; Li, JM
刊名	Journal of rare earths
	2004-12-01
卷号	22页码:275-278
关键词	4h-sic P-n junction Electroluminescence
ISSN号	1002-0721
通讯作者	Sun, gs(gshsun@red.semi.ac.cn)
英文摘要	Homoepitaxial growth of 4h-sic on off-oriented si-face(0001) substrates was performed by using the step-controlled epitaxy technique in a newly developed low-pressure hot-wall cvd (lp-hwcvd) system with a horizontal air-cooled quartz tube at around 1500 degreesc and 1.33 x 10(4) pa by employing sih4 + c2h4 + h-2. in-situ doping during growth was carried out by adding nh3 gas into the precursor gases. it was shown that the maximum hall mobility of the undoped 4h-sic epilayers at room temperature is about 430 cm(2) (.) v-1 (.) s(-1) with a carrier concentration of similar to 10(16) cm(-3) and the highest carrier concentration of the n-doped 4h-sic epilayer obtained at nh3 flow rate of 3 sccm is about 2.7 x 10(21) cm(-3) with a mobility of 0.75 cm(2) (.) v-1 (.) s(-1). sic p-n junctions were obtained by epitaxially growing n-doped 4h-sic epilayers on al-doped 4h-sic substrates. the c - v characteristics of the diodes were linear in the 1/c-3 - v coordinates indicating that the obtained p-n junctions were graded with a built-in voltage of 2.7 ev. the room temperature electroluminescence spectra of 4h-sic p-n junctions are studied as a function of forward current. the d-a pair recombination due to nitrogen donors and the unintentional, deep boron center is dominant at low forward bias, while the d-a pair recombination due to nitrogen donors and aluminum acceptors are dominant at higher forward biases. the p-n junctions could operate at temperature of up to 400 degreesc, which provides a potential for high-temperature applications.
WOS关键词	GROWTH
WOS研究方向	Chemistry
WOS类目	Chemistry, Applied
语种	英语
出版者	METALLURGICAL INDUSTRY PRESS
WOS记录号	WOS:000226846700070
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426261
专题	半导体研究所
通讯作者	Sun, GS
作者单位	Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Sun, GS,Zhang, YX,Gao, X,et al. Electrical properties and electroluminescence of 4h-sic p-n junction diodes[J]. Journal of rare earths,2004,22:275-278.
APA	Sun, GS.,Zhang, YX.,Gao, X.,Wang, L.,Zhao, WS.,...&Li, JM.(2004).Electrical properties and electroluminescence of 4h-sic p-n junction diodes.Journal of rare earths,22,275-278.
MLA	Sun, GS,et al."Electrical properties and electroluminescence of 4h-sic p-n junction diodes".Journal of rare earths 22(2004):275-278.

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