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	Magneto - transport of electron symmetric and antisymmrtric states in highly doped ingaas/inalas single quantum well
	Qiu, ZJ; Gui, YS; Cui, LJ; Zeng, YP; Huang, ZM; Shu, XZ; Dai, N; Guo, SL; Chu, JH
刊名	Journal of infrared and millimeter waves
	2004-10-01
卷号	23期号:5页码:329-332
关键词	Ingaas/inalas quantum well Magneto-transport Symmetric state Antisymmetric state
ISSN号	1001-9014
通讯作者	Qiu, zj()
英文摘要	Beating patterns in longitudinal resistance caused by the symmetric and antisymmetric states were observed in a heavily doped ingaas/inalas quantum well by using variable temperature hall measurement. the energy gap of symmetric and antisymmetric states is estimated to be 4mev from the analysis of beating node positions. in addition, the temperature dependences of the subband electron mobility and concentration were also studied from the mobility spectrum and multicarrier fitting procedure.
WOS关键词	TRANSISTOR
WOS研究方向	Optics
WOS类目	Optics
语种	英语
出版者	SCIENCE CHINA PRESS
WOS记录号	WOS:000224767500003
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426239
专题	半导体研究所
通讯作者	Qiu, ZJ
作者单位	1.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Qiu, ZJ,Gui, YS,Cui, LJ,et al. Magneto - transport of electron symmetric and antisymmrtric states in highly doped ingaas/inalas single quantum well[J]. Journal of infrared and millimeter waves,2004,23(5):329-332.
APA	Qiu, ZJ.,Gui, YS.,Cui, LJ.,Zeng, YP.,Huang, ZM.,...&Chu, JH.(2004).Magneto - transport of electron symmetric and antisymmrtric states in highly doped ingaas/inalas single quantum well.Journal of infrared and millimeter waves,23(5),329-332.
MLA	Qiu, ZJ,et al."Magneto - transport of electron symmetric and antisymmrtric states in highly doped ingaas/inalas single quantum well".Journal of infrared and millimeter waves 23.5(2004):329-332.

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