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	Optical identification of electronic state levels of an asymmetric inas/ingaas/gaas dot-in-well structure
	Zhou,Xiaolong; Chen,Yonghai; Xu,Bo
刊名	Nanoscale research letters
	2011-04-08
卷号	6期号:1
ISSN号	1556-276X
DOI	10.1186/1556-276x-6-317
通讯作者	Zhou,xiaolong(zhouxl06@semi.ac.cn)
英文摘要	Abstractwe have studied the electronic state levels of an asymmetric inas/ingaas/gaas dot-in-well structure, i.e., with an in0.15ga0.85as quantum well (qw) as capping layer above inas quantum dots (qds), via temperature-dependent photoluminescence, photo-modulated reflectance, and rapid thermal annealing (rta) treatments. it is shown that the carrier transfer via wetting layer (wl) is impeded according to the results of temperature dependent peak energy and line width variation of both the ground states (gs) and excited states (es) of qds. the quenching of integrated intensity is ascribed to the thermal escape of electron from the dots to the complex in0.15ga0.85as qw + inas wl structure. additionally, as the rta temperature increases, the peak of pl blue shifts and the full width at half maximum shrinks. especially, the intensity ratio of gs to es reaches the maximum when the energy difference approaches the energy of one or two lo phonon(s) of inas bulk material, which could be explained by phonon-enhanced inter-sublevels carrier relaxation in such asymmetric dot-in-well structure.pacs: 73.63.kv; 73.61.ey; 78.67.hc; 81.16.dn
语种	英语
出版者	Springer New York
WOS记录号	BMC:10.1186/1556-276X-6-317
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426170
专题	半导体研究所
通讯作者	Zhou,Xiaolong
作者单位	Chinese Academy of Sciences; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors
推荐引用方式 GB/T 7714	Zhou,Xiaolong,Chen,Yonghai,Xu,Bo. Optical identification of electronic state levels of an asymmetric inas/ingaas/gaas dot-in-well structure[J]. Nanoscale research letters,2011,6(1).
APA	Zhou,Xiaolong,Chen,Yonghai,&Xu,Bo.(2011).Optical identification of electronic state levels of an asymmetric inas/ingaas/gaas dot-in-well structure.Nanoscale research letters,6(1).
MLA	Zhou,Xiaolong,et al."Optical identification of electronic state levels of an asymmetric inas/ingaas/gaas dot-in-well structure".Nanoscale research letters 6.1(2011).

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