Study of a GaAs MESFET model with ultra-low power consumption | |
Wang, Wenqi[1]; Wang, Rongguang[2]; Chen, Baolin[3]; Wang, Tong[4] | |
刊名 | Journal of Shanghai University
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1998 | |
卷号 | 2页码:213-217 |
ISSN号 | 10076417 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2425503 |
专题 | 上海大学 |
推荐引用方式 GB/T 7714 | Wang, Wenqi[1],Wang, Rongguang[2],Chen, Baolin[3],et al. Study of a GaAs MESFET model with ultra-low power consumption[J]. Journal of Shanghai University,1998,2:213-217. |
APA | Wang, Wenqi[1],Wang, Rongguang[2],Chen, Baolin[3],&Wang, Tong[4].(1998).Study of a GaAs MESFET model with ultra-low power consumption.Journal of Shanghai University,2,213-217. |
MLA | Wang, Wenqi[1],et al."Study of a GaAs MESFET model with ultra-low power consumption".Journal of Shanghai University 2(1998):213-217. |
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