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Low thermal expansion behavior and transport properties of ni and ge co-doped manganese nitride materials at cryogenic temperatures
Huang, Rongjin1; Chu, Xinxin1,2; Wu, Zhixiong1,2; Li, Laifeng1; Xu, Xiangdong1
刊名Applied physics a-materials science & processing
2010-05-01
卷号99期号:2页码:465-469
ISSN号0947-8396
DOI10.1007/s00339-010-5547-x
通讯作者Li, laifeng(lfli@mail.ipc.ac.cn)
英文摘要A series of ni and ge co-doped manganese nitride materials were fabricated by mechanical ball milling followed by solid-state sintering. their thermal expansion properties and electrical and thermal conductivities were investigated in the temperature range of 77-300 k. the results show that ni and ge co-doped manganese nitride materials have negative thermal expansion (nte), and the operation-temperature window of nte shifts toward the lower temperature region and the variation of linear thermal expansion (delta l/l ((300k))) in the operation-temperature window of nte decreases with increasing ni content. the combination of these two factors results in a low coefficient of thermal expansion (cte) at cryogenic temperatures. the average cte of mn(3)(cu(0.2)ni(0.4)ge(0.4))n drops to 'zero' in the temperature range of 190-77 k. the values of electrical and thermal conductivities of the ni and ge co-doped manganese nitride materials are in the ranges of 2-3x10(3) (ohm cm)(-1) and 1.6-3.4 w (m k)(-1), respectively.
WOS关键词PEROVSKITES ; PHASES ; INVAR
WOS研究方向Materials Science ; Physics
WOS类目Materials Science, Multidisciplinary ; Physics, Applied
语种英语
出版者SPRINGER
WOS记录号WOS:000277784300018
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2412885
专题中国科学院大学
通讯作者Li, Laifeng
作者单位1.Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Cryogen, Beijing, Peoples R China
2.Chinese Acad Sci, Grad Univ, Beijing, Peoples R China
推荐引用方式
GB/T 7714
Huang, Rongjin,Chu, Xinxin,Wu, Zhixiong,et al. Low thermal expansion behavior and transport properties of ni and ge co-doped manganese nitride materials at cryogenic temperatures[J]. Applied physics a-materials science & processing,2010,99(2):465-469.
APA Huang, Rongjin,Chu, Xinxin,Wu, Zhixiong,Li, Laifeng,&Xu, Xiangdong.(2010).Low thermal expansion behavior and transport properties of ni and ge co-doped manganese nitride materials at cryogenic temperatures.Applied physics a-materials science & processing,99(2),465-469.
MLA Huang, Rongjin,et al."Low thermal expansion behavior and transport properties of ni and ge co-doped manganese nitride materials at cryogenic temperatures".Applied physics a-materials science & processing 99.2(2010):465-469.
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