Low thermal expansion behavior and transport properties of ni and ge co-doped manganese nitride materials at cryogenic temperatures | |
Huang, Rongjin1; Chu, Xinxin1,2; Wu, Zhixiong1,2; Li, Laifeng1; Xu, Xiangdong1 | |
刊名 | Applied physics a-materials science & processing |
2010-05-01 | |
卷号 | 99期号:2页码:465-469 |
ISSN号 | 0947-8396 |
DOI | 10.1007/s00339-010-5547-x |
通讯作者 | Li, laifeng(lfli@mail.ipc.ac.cn) |
英文摘要 | A series of ni and ge co-doped manganese nitride materials were fabricated by mechanical ball milling followed by solid-state sintering. their thermal expansion properties and electrical and thermal conductivities were investigated in the temperature range of 77-300 k. the results show that ni and ge co-doped manganese nitride materials have negative thermal expansion (nte), and the operation-temperature window of nte shifts toward the lower temperature region and the variation of linear thermal expansion (delta l/l ((300k))) in the operation-temperature window of nte decreases with increasing ni content. the combination of these two factors results in a low coefficient of thermal expansion (cte) at cryogenic temperatures. the average cte of mn(3)(cu(0.2)ni(0.4)ge(0.4))n drops to 'zero' in the temperature range of 190-77 k. the values of electrical and thermal conductivities of the ni and ge co-doped manganese nitride materials are in the ranges of 2-3x10(3) (ohm cm)(-1) and 1.6-3.4 w (m k)(-1), respectively. |
WOS关键词 | PEROVSKITES ; PHASES ; INVAR |
WOS研究方向 | Materials Science ; Physics |
WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
语种 | 英语 |
出版者 | SPRINGER |
WOS记录号 | WOS:000277784300018 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2412885 |
专题 | 中国科学院大学 |
通讯作者 | Li, Laifeng |
作者单位 | 1.Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Cryogen, Beijing, Peoples R China 2.Chinese Acad Sci, Grad Univ, Beijing, Peoples R China |
推荐引用方式 GB/T 7714 | Huang, Rongjin,Chu, Xinxin,Wu, Zhixiong,et al. Low thermal expansion behavior and transport properties of ni and ge co-doped manganese nitride materials at cryogenic temperatures[J]. Applied physics a-materials science & processing,2010,99(2):465-469. |
APA | Huang, Rongjin,Chu, Xinxin,Wu, Zhixiong,Li, Laifeng,&Xu, Xiangdong.(2010).Low thermal expansion behavior and transport properties of ni and ge co-doped manganese nitride materials at cryogenic temperatures.Applied physics a-materials science & processing,99(2),465-469. |
MLA | Huang, Rongjin,et al."Low thermal expansion behavior and transport properties of ni and ge co-doped manganese nitride materials at cryogenic temperatures".Applied physics a-materials science & processing 99.2(2010):465-469. |
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