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	Pressure control of the synthesizing chamber with the effective disturbance input for the nanometer Si3N4 production
	Chen, RB[1]; Fei, MR[2]; Huang, YZ[3]; Zhang, CW[4]
	2003
会议名称	ICEMI'2003: PROCEEDINGS OF THE SIXTH INTERNATIONAL CONFERENCE ON ELECTRONIC MEASUREMENT & INSTRUMENTS, VOLS 1-3
关键词	nanometer Si3N4 laser-aided production disturbance input ratio-cascade control multi-layer fuzzy algorithm
页码	2248-2250
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2412575
专题	上海大学
作者单位	Shanghai Univ, Sch Mech Engn & Automat, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Chen, RB[1],Fei, MR[2],Huang, YZ[3],et al. Pressure control of the synthesizing chamber with the effective disturbance input for the nanometer Si3N4 production[C]. 见:ICEMI'2003: PROCEEDINGS OF THE SIXTH INTERNATIONAL CONFERENCE ON ELECTRONIC MEASUREMENT & INSTRUMENTS, VOLS 1-3.

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