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	Blending induced stack-ordering and performance improvement in a solution-processed n-type organic field-effect transistor
	Wei, Zhongming1,2; Xi, Hongxia1,2; Dong, Huanli1; Wang, Linjun1; Xu, Wei1; Hu, Wenping1; Zhu, Daoben1
刊名	Journal of materials chemistry
	2010
卷号	20期号:6页码:1203-1207
ISSN号	0959-9428
DOI	10.1039/b918874f
通讯作者	Xu, wei(wxu@iccas.ac.cn)
英文摘要	The mobilities of the solution-processed n-type organic semiconductor, n,n'-di((z)-9-octadecene)-3,4,9,10-perylene tetracarboxylic diimide (ptcdi-e), were dramatically improved (up to 30 times) by blending with electron donors. the reason can be assigned to the facilitated charge transport due to the increased stack-ordering and crystallinity of the spin-coated thin films after blending. this provides a new way to enhance the performance of existing organic semiconductors by intentional blending.
WOS关键词	THIN-FILM TRANSISTORS ; PERYLENE TETRACARBOXYLIC DIIMIDE ; COMPLEMENTARY CIRCUITS ; CHARGE-TRANSPORT ; EFFECT MOBILITY ; SOLAR-CELLS ; SEMICONDUCTORS ; DEVICES ; ELECTRON ; TETRATHIAFULVALENE
WOS研究方向	Chemistry ; Materials Science
WOS类目	Chemistry, Physical ; Materials Science, Multidisciplinary
语种	英语
出版者	ROYAL SOC CHEMISTRY
WOS记录号	WOS:000273961900027
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2411889
专题	中国科学院大学
通讯作者	Xu, Wei
作者单位	1.Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China 2.Chinese Acad Sci, Grad Univ, Beijing 100039, Peoples R China
推荐引用方式 GB/T 7714	Wei, Zhongming,Xi, Hongxia,Dong, Huanli,et al. Blending induced stack-ordering and performance improvement in a solution-processed n-type organic field-effect transistor[J]. Journal of materials chemistry,2010,20(6):1203-1207.
APA	Wei, Zhongming.,Xi, Hongxia.,Dong, Huanli.,Wang, Linjun.,Xu, Wei.,...&Zhu, Daoben.(2010).Blending induced stack-ordering and performance improvement in a solution-processed n-type organic field-effect transistor.Journal of materials chemistry,20(6),1203-1207.
MLA	Wei, Zhongming,et al."Blending induced stack-ordering and performance improvement in a solution-processed n-type organic field-effect transistor".Journal of materials chemistry 20.6(2010):1203-1207.

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