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	Annealing high resistivity CdZnTe wafers under controlled Cd/Zn partial pressures
	Li, WW[1]; Sang, WB[2]; Zhang, B[3]; Min, JH[4]; Yu, F[5]
刊名	JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
	2004
卷号	20页码:703-706
关键词	CdZnTe annealing partial pressures over Cd1-xZnx gamma-ray detector
ISSN号	1005-0302
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2405865
专题	上海大学
作者单位	1.Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 2.Shanghai Jiao Tong Univ, Inst Composite Mat, Shanghai 200030, Peoples R China. 3.Shanghai Univ, Sch Mat Sci & Engn, Jiading Campus, Shanghai 201800, Peoples R China.
推荐引用方式 GB/T 7714	Li, WW[1],Sang, WB[2],Zhang, B[3],et al. Annealing high resistivity CdZnTe wafers under controlled Cd/Zn partial pressures[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2004,20:703-706.
APA	Li, WW[1],Sang, WB[2],Zhang, B[3],Min, JH[4],&Yu, F[5].(2004).Annealing high resistivity CdZnTe wafers under controlled Cd/Zn partial pressures.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,20,703-706.
MLA	Li, WW[1],et al."Annealing high resistivity CdZnTe wafers under controlled Cd/Zn partial pressures".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 20(2004):703-706.

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