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Langmuir-blodgett monolayer as an efficient p-conducting channel of ambipolar organic transistors and a template for n-type molecular alignment
Wei, Zhongming1,2; Xu, Wei1; Hu, Wenping1; Zhu, Daoben1
刊名Langmuir
2009-03-17
卷号25期号:6页码:3349-3351
ISSN号0743-7463
DOI10.1021/la804200f
通讯作者Xu, wei(wxu@iccas.ac.cn)
英文摘要The langmuir-blodgett (lb) technique was used to deposit a monolayer on the gate insulator to identify the role of the monolayer in the organic transistors. ambipolar transistors were obtained on the basis of the cupc lb monolayer and f(16)cupc films. the results proved that a single molecular layer is enough to show field-effect performance. moreover, the preorganized lb monolayer led to the alignment of subsequent molecules deposited on it through intermolecular pi-pi interactions.
WOS关键词FIELD-EFFECT TRANSISTORS ; COPPER PHTHALOCYANINE ; CHARGE-TRANSPORT ; FILMS ; THIN ; ORIENTATION ; SEMICONDUCTORS ; SEXITHIOPHENE ; SUBSTRATE ; CRYSTALS
WOS研究方向Chemistry ; Materials Science
WOS类目Chemistry, Multidisciplinary ; Chemistry, Physical ; Materials Science, Multidisciplinary
语种英语
出版者AMER CHEMICAL SOC
WOS记录号WOS:000264145000007
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2401135
专题中国科学院大学
通讯作者Xu, Wei
作者单位1.Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
2.Chinese Acad Sci, Grad Univ, Beijing 100039, Peoples R China
推荐引用方式
GB/T 7714
Wei, Zhongming,Xu, Wei,Hu, Wenping,et al. Langmuir-blodgett monolayer as an efficient p-conducting channel of ambipolar organic transistors and a template for n-type molecular alignment[J]. Langmuir,2009,25(6):3349-3351.
APA Wei, Zhongming,Xu, Wei,Hu, Wenping,&Zhu, Daoben.(2009).Langmuir-blodgett monolayer as an efficient p-conducting channel of ambipolar organic transistors and a template for n-type molecular alignment.Langmuir,25(6),3349-3351.
MLA Wei, Zhongming,et al."Langmuir-blodgett monolayer as an efficient p-conducting channel of ambipolar organic transistors and a template for n-type molecular alignment".Langmuir 25.6(2009):3349-3351.
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