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Single-electron tunneling and coulomb blockade in carbon-based quantum dots
Fan, Wei1,2; Zhang, Rui-qin1,3,4
刊名Frontiers of physics in china
2009-09-01
卷号4期号:3页码:315-326
关键词Single-electron tunneling (set) Coulomb blockade (cb) Coulomb staircase Carbon nanotube (cnt) Fullerene Orthodox theory
ISSN号1673-3487
DOI10.1007/s11467-009-0023-9
通讯作者Zhang, rui-qin(aprqz@cityu.edu.hk)
英文摘要Single-electron tunneling (set) and coulomb blockade (cb) phenomena have been widely observed in nanoscaled electronics and have received intense attention around the world. in the past few years, we have studied set in carbon nanotube fragments and fullerenes by applying the so-called "ortho-dox" theory [28]. as outlined in this review article, we investigated the single-electron charging and discharging process via current-voltage characteristics, gate effect, and electronic structure-related factors. because the investigated geometric structures are three-dimensionally confined, resulting in a discrete spectrum of energy levels resembling the property of quantum dots, we evidenced the cb and coulomb staircases in these structures. these nanostructures are sufficiently small that introducing even a single electron is sufficient to dramatically change the transport properties as a result of the charging energy associated with this extra electron. we found that the coulomb staircases occur in the i-v characteristics only when the width of the left barrier junction is smaller than that of the right barrier junction. in this case, the transmission coefficient of the emitter junction is larger than that of the collector junction; also, occupied levels enter the bias window, thereby enhancing the tunneling extensively.
WOS关键词ROOM-TEMPERATURE ; SMALL FULLERENES ; C-60 MOLECULES ; NANOTUBES ; OSCILLATIONS ; DENSITY ; MICROSCOPY ; TRANSPORT ; JUNCTIONS ; BEHAVIOR
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
出版者HIGHER EDUCATION PRESS
WOS记录号WOS:000280414100007
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2398431
专题中国科学院大学
通讯作者Zhang, Rui-qin
作者单位1.Chinese Acad Sci, Tech Inst Phys & Chem, Nanoorgan Photoelect Lab, Beijing 100190, Peoples R China
2.Chinese Acad Sci, Grad Univ, Beijing 100190, Peoples R China
3.City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China
4.City Univ Hong Kong, Ctr Super Diamond & Adv Films, Hong Kong, Hong Kong, Peoples R China
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Fan, Wei,Zhang, Rui-qin. Single-electron tunneling and coulomb blockade in carbon-based quantum dots[J]. Frontiers of physics in china,2009,4(3):315-326.
APA Fan, Wei,&Zhang, Rui-qin.(2009).Single-electron tunneling and coulomb blockade in carbon-based quantum dots.Frontiers of physics in china,4(3),315-326.
MLA Fan, Wei,et al."Single-electron tunneling and coulomb blockade in carbon-based quantum dots".Frontiers of physics in china 4.3(2009):315-326.
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