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The optimization of interfacial properties of nc-si : h/c-si solar cells in hot-wire chemical vapor deposition process
Zhang, Qunfang; Zhu, Meifang; Liu, Fengzhen; Zhou, Yuqin
刊名Journal of materials science-materials in electronics
2007-10-01
卷号18页码:S33-s36
ISSN号0957-4522
DOI10.1007/s10854-007-9180-1
通讯作者Zhu, meifang(mfzhu@gucas.ac.cn)
英文摘要Passivation of c-si surface was processed by hot-wire chemical vapor deposition through the pretreatment of atomic hydrogen. the interfacial properties were examined by the admittance spectroscopy. the interfacial property is sensitive to the atomic hydrogen treatment time t(h) of c-si substrates rather than the crystallization of the buffer layer. it was found that the th of 30-60 s is essential for the low defects states in the emitter. the interfacial morphology between nano-crystalline si (nc-si:h) layer and c-si substrates was investigated by high resolution transmission electron microscopy in cross section geometry. the amorphous, mixed epitaxial/amorphous and epitaxy phases were observed as the buffer layer growth at hydrogen dilution ratios of 0, 0.5, 0.86, 0.97, respectively. by optimizing th and using an epitaxial silicon buffer layer, the efficiency of 17.36% of solar cell with the structure of n epi-si/i epi-si/p c-si was fabricated at 250 degrees c.
WOS关键词FILMS
WOS研究方向Engineering ; Materials Science ; Physics
WOS类目Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
语种英语
出版者SPRINGER
WOS记录号WOS:000248803300007
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2382877
专题中国科学院大学
通讯作者Zhu, Meifang
作者单位Chinese Acad Sci, Grad Sch, Coll Phys Sci, Beijing 100049, Peoples R China
推荐引用方式
GB/T 7714
Zhang, Qunfang,Zhu, Meifang,Liu, Fengzhen,et al. The optimization of interfacial properties of nc-si : h/c-si solar cells in hot-wire chemical vapor deposition process[J]. Journal of materials science-materials in electronics,2007,18:S33-s36.
APA Zhang, Qunfang,Zhu, Meifang,Liu, Fengzhen,&Zhou, Yuqin.(2007).The optimization of interfacial properties of nc-si : h/c-si solar cells in hot-wire chemical vapor deposition process.Journal of materials science-materials in electronics,18,S33-s36.
MLA Zhang, Qunfang,et al."The optimization of interfacial properties of nc-si : h/c-si solar cells in hot-wire chemical vapor deposition process".Journal of materials science-materials in electronics 18(2007):S33-s36.
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