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	Direct growth of sb2te3 on graphene by atomic layer deposition
	Zheng, Li1,2; Cheng, Xinhong1; Cao, Duo1,2; Wang, Qian1,2; Wang, Zhongjian1; Xia, Chao1,2; Shen, Lingyan1,2; Yu, Yuehui1; Shen, Dashen3
刊名	Rsc advances
	2015
卷号	5期号:50页码:40007-40011
ISSN号	2046-2069
DOI	10.1039/c5ra04698j
通讯作者	Cheng, xinhong(xh_cheng@mail.sim.ac.cn)
英文摘要	The direct growth of sb2te3 on graphene is achieved by atomic layer deposition (ald) with pre-(me3si)(2)te treatment. the results of atomic force microscopy (afm) indicate volmer-weber island growth is the dominant growth mode for ald sb2te3 growth on graphene. high resolution transmission electron microscopy (hrtem) analysis reveals perfect crystal structures of sb2te3 on graphene and no interface layer generation. the characterization of x-ray photoelectron spectroscopy (xps) implies the impermeability of graphene can maintain sb2te3 intact and isolate the adverse effects of substrates. our study provides a step forward to grow high quality sb2te3 at low temperature and expand the potential applications of graphene in ald techniques.
WOS关键词	TOPOLOGICAL INSULATORS ; THIN-FILMS ; BI2TE3
WOS研究方向	Chemistry
WOS类目	Chemistry, Multidisciplinary
语种	英语
出版者	ROYAL SOC CHEMISTRY
WOS记录号	WOS:000354211100046
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2376511
专题	中国科学院大学
通讯作者	Cheng, Xinhong
作者单位	1.Chinese Acad Sci, Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Univ Alabama, Huntsville, AL 35899 USA
推荐引用方式 GB/T 7714	Zheng, Li,Cheng, Xinhong,Cao, Duo,et al. Direct growth of sb2te3 on graphene by atomic layer deposition[J]. Rsc advances,2015,5(50):40007-40011.
APA	Zheng, Li.,Cheng, Xinhong.,Cao, Duo.,Wang, Qian.,Wang, Zhongjian.,...&Shen, Dashen.(2015).Direct growth of sb2te3 on graphene by atomic layer deposition.Rsc advances,5(50),40007-40011.
MLA	Zheng, Li,et al."Direct growth of sb2te3 on graphene by atomic layer deposition".Rsc advances 5.50(2015):40007-40011.

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