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	Vanadium doped sb2te3 material with modified crystallization mechanism for phase-change memory application
	Ji, Xinglong1,2; Wu, Liangcai1; Cao, Liangliang1; Zhu, Min1; Rao, Feng1; Zheng, Yonghui1,2; Zhou, Wangyang1,2; Song, Zhitang1; Feng, Songlin1
刊名	Applied physics letters
	2015-06-15
卷号	106期号:24页码:5
ISSN号	0003-6951
DOI	10.1063/1.4922505
通讯作者	Wu, liangcai(wuliangcai@mail.sim.ac.cn)
英文摘要	In this paper, v0.21sb2te3 (vst) has been proposed for phase-change memory applications. with vanadium incorporating, vst has better thermal stability than sb2te3 and can maintain in amorphous phase at room temperature. two resistance steps were observed in temperature dependent resistance measurements. by real-time observing the temperature dependent lattice structure evolution, vst presents as a homogenous phase throughout the whole thermal process. combining hall measurement and transmission electron microscopy results, we can ascribe the two resistance steps to the unique crystallization mechanism of vst material. then, the amorphous thermal stability enhancement can also be rooted in the suppression of the fast growth crystallization mechanism. furthermore, the applicability of vst is demonstrated by resistance-voltage measurement, and the phase transition of vst can be triggered by a 15 ns electric pulse. in addition, endurance up to 2: 7 x 10(4) cycles makes vst a promising candidate for phase-change memory applications. (c) 2015 aip publishing llc.
WOS关键词	TI-SB-TE ; STORAGE ; FILMS ; POWER
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000356618700031
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2376482
专题	中国科学院大学
通讯作者	Wu, Liangcai
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100080, Peoples R China
推荐引用方式 GB/T 7714	Ji, Xinglong,Wu, Liangcai,Cao, Liangliang,et al. Vanadium doped sb2te3 material with modified crystallization mechanism for phase-change memory application[J]. Applied physics letters,2015,106(24):5.
APA	Ji, Xinglong.,Wu, Liangcai.,Cao, Liangliang.,Zhu, Min.,Rao, Feng.,...&Feng, Songlin.(2015).Vanadium doped sb2te3 material with modified crystallization mechanism for phase-change memory application.Applied physics letters,106(24),5.
MLA	Ji, Xinglong,et al."Vanadium doped sb2te3 material with modified crystallization mechanism for phase-change memory application".Applied physics letters 106.24(2015):5.

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