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	Impurity-induced formation of bilayered graphene on copper by chemical vapor deposition
	Li, Jun1,2; Zhuang, Jianing3; Shen, Chengmin1,4; Tian, Yuan1; Que, Yande1,2; Ma, Ruisong1,2; Pan, Jinbo1,2; Zhang, Yanfang1,2; Wang, Yeliang1,4; Du, Shixuan1,4
刊名	Nano research
	2016-09-01
卷号	9期号:9页码:2803-2810
关键词	Graphene Chemical vapor deposition (cvd) Bilayer Growth mechanism
ISSN号	1998-0124
DOI	10.1007/s12274-016-1169-8
通讯作者	Shen, chengmin(cmshen@iphy.ac.cn) ; Ding, feng(feng.ding@polyu.edu.hk) ; Gao, hong-jun(hjgao@iphy.ac.cn)
英文摘要	High-quality single-layered and bilayered graphene (slg and blg) was synthesized on copper foil surfaces by controllable chemical vapor deposition (cvd). impurity nanoparticles formed on the copper foil surface by hightemperature annealing were found to play a crucial role in the growth of blg. analysis of energy-dispersive spectrometry (eds) data indicated that these nanoparticles consisted of silicon and aluminum. according to the inverted wedding cake model, these nanoparticles served as nucleation centers for blg growth and the free space between a nanoparticle and graphene served as the center of c injection for the continuous growth of the adlayer beneath the top layer. by combining phase-field theory simulations, we confirmed the mechanism of blg growth and revealed more details about it in comparison with slg growth. for the first time, this study led to a complete understanding of the blg growth mechanism from nucleation to continuous growth in the cvd process, and it has opened a door to the thickness-controllable synthesis of graphene.
WOS关键词	GROWTH ; SUBSTRATE
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	TSINGHUA UNIV PRESS
WOS记录号	WOS:000382882200029
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2376193
专题	中国科学院大学
通讯作者	Shen, Chengmin; Ding, Feng; Gao, Hong-Jun
作者单位	1.Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Hong Kong Polytech Univ, Inst Text & Clothing, Kowloon, Hong Kong, Peoples R China 4.Beijing Key Lab Nanomat & Nanodevices, Beijing 100190, Peoples R China
推荐引用方式 GB/T 7714	Li, Jun,Zhuang, Jianing,Shen, Chengmin,et al. Impurity-induced formation of bilayered graphene on copper by chemical vapor deposition[J]. Nano research,2016,9(9):2803-2810.
APA	Li, Jun.,Zhuang, Jianing.,Shen, Chengmin.,Tian, Yuan.,Que, Yande.,...&Gao, Hong-Jun.(2016).Impurity-induced formation of bilayered graphene on copper by chemical vapor deposition.Nano research,9(9),2803-2810.
MLA	Li, Jun,et al."Impurity-induced formation of bilayered graphene on copper by chemical vapor deposition".Nano research 9.9(2016):2803-2810.

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