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	Phosphorous diffusion gettering of n-type cz silicon wafers for improving the performances of silicon heterojunction solar cells
	Zhu, Fangzhou1,2; Wang, Dongliang3; Bian, Jiantao1; Liu, Jinning1; Liu, Zhengxin1,2
刊名	Solar energy materials and solar cells
	2016-12-01
卷号	157页码:74-78
关键词	Phosphorus diffusion gettering N-type silicon wafer Minority carrier lifetime Heterojunction solar cell
ISSN号	0927-0248
DOI	10.1016/j.solmat.2016.05.023
通讯作者	Liu, zhengxin(z.x.liu@mail.sim.ac.cn)
英文摘要	Phosphorous diffusion gettering (pdg) for different kinds of commercial n-type cz silicon wafers was investigated for the application in silicon heterojunction (shj) solar cells. it was found that surplus phosphorus diffusion was effective in improving the effective minority carrier lifetime (tau(eff)). highest tau(eff) was obtained at the optimal diffusion temperature of 840 degrees c, which was almost independent on the diffusion duration at a wide region from 5 to 60 min, corresponding to a sheet resistance region from 85 to 21 omega/sq. the segregation coefficient and gettering sites were considered responsible for the gettering mechanism. when the optimized pdg process was applied to shj solar cells with three different groups of commercial si wafers, the average efficiencies were improved from 21.2% to 22.4%, 21.5% to 22.4%, and 22.1% to 22.5%, respectively, where the efficiency gains were mainly contributed by the improvements of open-circuit voltage and fill factor. (c) 2016 elsevier b.v. all rights reserved.
WOS关键词	MULTICRYSTALLINE SILICON ; IRON
WOS研究方向	Energy & Fuels ; Materials Science ; Physics
WOS类目	Energy & Fuels ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000384391700010
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2375752
专题	中国科学院大学
通讯作者	Liu, Zhengxin
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr New Energy Technol, Shanghai 201800, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.State Key Lab Photovolta Sci & Technol SKL PVST, Trinasolar 213031, Changzhou, Peoples R China
推荐引用方式 GB/T 7714	Zhu, Fangzhou,Wang, Dongliang,Bian, Jiantao,et al. Phosphorous diffusion gettering of n-type cz silicon wafers for improving the performances of silicon heterojunction solar cells[J]. Solar energy materials and solar cells,2016,157:74-78.
APA	Zhu, Fangzhou,Wang, Dongliang,Bian, Jiantao,Liu, Jinning,&Liu, Zhengxin.(2016).Phosphorous diffusion gettering of n-type cz silicon wafers for improving the performances of silicon heterojunction solar cells.Solar energy materials and solar cells,157,74-78.
MLA	Zhu, Fangzhou,et al."Phosphorous diffusion gettering of n-type cz silicon wafers for improving the performances of silicon heterojunction solar cells".Solar energy materials and solar cells 157(2016):74-78.

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