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	Oxidation precursor dependence of atomic layer deposited al2o3 films in a-si:h(i)/al2o3 surface passivation stacks
	Xiang,Yuren; Zhou,Chunlan; Jia,Endong; Wang,Wenjing
刊名	Nanoscale research letters
	2015-03-19
卷号	10期号:1
关键词	Atomic layer deposition Al2o3 A-si:h(i)/al2o3 stack Interface trap density
ISSN号	1931-7573
DOI	10.1186/s11671-015-0798-2
通讯作者	Zhou,chunlan(zhouchl@mail.iee.ac.cn)
英文摘要	Abstractin order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. in this work, we prepared a-si:h(i)/al2o3 stacks on koh solution-polished n-type solar grade mono-silicon(100) wafers. for the al2o3 film deposition, both thermal atomic layer deposition (t-ald) and plasma enhanced atomic layer deposition (pe-ald) were used. interface trap density spectra were obtained for si passivation with a-si films and a-si:h(i)/al2o3 stacks by a non-contact corona c-v technique. after the fabrication of a-si:h(i)/al2o3 stacks, the minimum interface trap density was reduced from original 3?×?1012 to 1?×?1012?cm?2?ev?1, the surface total charge density increased by nearly one order of magnitude for pe-ald samples and about 0.4?×?1012?cm?2 for a t-ald sample, and the carrier lifetimes increased by a factor of three (from about 10?μs to about 30?μs). combining these results with an x-ray photoelectron spectroscopy analysis, we discussed the influence of an oxidation precursor for ald al2o3 deposition on al2o3 single layers and a-si:h(i)/al2o3 stack surface passivation from field-effect passivation and chemical passivation perspectives. in addition, the influence of the stack fabrication process on the a-si film structure was also discussed in this study.
语种	英语
出版者	Springer US
WOS记录号	BMC:10.1186/S11671-015-0798-2
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2374283
专题	中国科学院大学
通讯作者	Zhou,Chunlan
作者单位	Chinese Academy of Sciences; Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering
推荐引用方式 GB/T 7714	Xiang,Yuren,Zhou,Chunlan,Jia,Endong,et al. Oxidation precursor dependence of atomic layer deposited al2o3 films in a-si:h(i)/al2o3 surface passivation stacks[J]. Nanoscale research letters,2015,10(1).
APA	Xiang,Yuren,Zhou,Chunlan,Jia,Endong,&Wang,Wenjing.(2015).Oxidation precursor dependence of atomic layer deposited al2o3 films in a-si:h(i)/al2o3 surface passivation stacks.Nanoscale research letters,10(1).
MLA	Xiang,Yuren,et al."Oxidation precursor dependence of atomic layer deposited al2o3 films in a-si:h(i)/al2o3 surface passivation stacks".Nanoscale research letters 10.1(2015).

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