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	Metal-semiconductor transition at a comparable resistivity level and positive magnetoresistance in mn3mn1?xpdxn thin films
	Xu,T1,2; Ji,G P1,2; Cao,Z X1; Ji,A L1
刊名	Journal of physics d: applied physics
	2018-01-12
卷号	51期号:5
关键词	Antiperovskite manganese nitride Thin film Metal-semiconductor transition Positive magnetoresistance
ISSN号	0022-3727
DOI	10.1088/1361-6463/aaa258
英文摘要	Abstract thin films of antiperovskite mn3mn1?xpdxn with x up to 0.36 were grown by reactive magnetron co-sputtering method. all the deposits exhibit a [1?0?0] preferential orientation, with the lattice constant slightly enlarged in samples with ever more pd atoms partially substituting the mni atoms in mn3mnn matrix. the replacement of mni atoms in antiperovskite structure by pd atoms, besides reducing the saturation magnetization, also invokes a metal-semiconductor transition which occurs remarkably at a comparable resistivity level. moreover, a positive magnetoresistance was observed in samples of a high pd content. these tunable electrical and magnetic properties of ternary antiperovskite compounds might promise some ingenious applications in electronic industry.
语种	英语
出版者	IOP Publishing
WOS记录号	IOP:0022-3727-51-5-AAA258
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2374013
专题	物理研究所
作者单位	1.Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China 2.University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China
推荐引用方式 GB/T 7714	Xu,T,Ji,G P,Cao,Z X,et al. Metal-semiconductor transition at a comparable resistivity level and positive magnetoresistance in mn3mn1?xpdxn thin films[J]. Journal of physics d: applied physics,2018,51(5).
APA	Xu,T,Ji,G P,Cao,Z X,&Ji,A L.(2018).Metal-semiconductor transition at a comparable resistivity level and positive magnetoresistance in mn3mn1?xpdxn thin films.Journal of physics d: applied physics,51(5).
MLA	Xu,T,et al."Metal-semiconductor transition at a comparable resistivity level and positive magnetoresistance in mn3mn1?xpdxn thin films".Journal of physics d: applied physics 51.5(2018).

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