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	Effects of high pressure on the ferromagnetism and in-plane electrical transport of (ba0.904k0.096)(zn0.805mn0.195)2as2 single crystal
	Zhao,G Q1,2; Li,Z3; Sun,F1,2; Yuan,Z1,2; Chen,B J1,2; Yu,S1,2; Peng,Y1,4; Deng,Z1; Wang,X C1; Jin,C Q1,2,5
刊名	Journal of physics: condensed matter
	2018-05-29
卷号	30期号:25
关键词	Diluted magnetic semiconductor Curie temperature Hydrostatic pressure Mnas4 tetrahedra
ISSN号	0953-8984
DOI	10.1088/1361-648x/aac367
英文摘要	Abstract pressure technique is an effective way to modify magnetic properties of diluted magnetic semiconductors (dms). based on single crystal, in-plane electrical transport properties of a new generation dms (ba0.904k0.096)(zn0.805mn0.195)2as2 have been measured with hydrostatic pressure up to 1.8?gpa. magnetic properties of the single crystal sample are effectively tuned by pressure. upon compression, the in-plane resistivity initially decreases but then increases when pressure is higher than 1.2?gpa. first principle calculations suggest that decrease of the resistivity is due to enhancement of density of state at femi energy while increase of the resistivity under higher pressure is caused by distorted mnas4 tetrahedra. we reveal that the configuration of the mnas4 tetrahedra and strength of interlayer as–as bonding are of importance to ferromagnetic coupling of (ba,k)(zn,mn)2as2.
语种	英语
出版者	IOP Publishing
WOS记录号	IOP:0953-8984-30-25-AAC367
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2373993
专题	物理研究所
作者单位	1.Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China 2.School of Physics, University of Chinese Academy of Sciences, Beijing 100190, People’s Republic of China 3.School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, People’s Republic of China 4.Department of Materials Science, Sichuan University, Chengdu 610064, People’s Republic of China 5.Collaborative Innovation Center of Quantum Matter, Beijing 100871, People’s Republic of China
推荐引用方式 GB/T 7714	Zhao,G Q,Li,Z,Sun,F,et al. Effects of high pressure on the ferromagnetism and in-plane electrical transport of (ba0.904k0.096)(zn0.805mn0.195)2as2 single crystal[J]. Journal of physics: condensed matter,2018,30(25).
APA	Zhao,G Q.,Li,Z.,Sun,F.,Yuan,Z.,Chen,B J.,...&Jin,C Q.(2018).Effects of high pressure on the ferromagnetism and in-plane electrical transport of (ba0.904k0.096)(zn0.805mn0.195)2as2 single crystal.Journal of physics: condensed matter,30(25).
MLA	Zhao,G Q,et al."Effects of high pressure on the ferromagnetism and in-plane electrical transport of (ba0.904k0.096)(zn0.805mn0.195)2as2 single crystal".Journal of physics: condensed matter 30.25(2018).

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