QQ客服 官方微博 反馈留言

	Organic light-emitting diodes based on new n-doped electron transport layer
	Ma, J. W.[1]; Xu, Wei[2]; Jiang, X. Y.[3]; Zhang, Z. L.[4]
刊名	SYNTHETIC METALS
	2008
卷号	158页码:810-814
关键词	Organic light-emitting diodes Doping concentration Carrier transport Conductivity
ISSN号	0379-6779
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2349373
专题	上海大学
作者单位	1.[1]Shanghai Univ, Dept Mat Sci, Shanghai 201800, Peoples R China. 2.[2]Shanghai Univ, Dept Mat Sci, Shanghai 201800, Peoples R China. 3.[3]Shanghai Univ, Dept Mat Sci, Shanghai 201800, Peoples R China. 4.[4]Shanghai Univ, Dept Mat Sci, Shanghai 201800, Peoples R China. 5.Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Ma, J. W.[1],Xu, Wei[2],Jiang, X. Y.[3],et al. Organic light-emitting diodes based on new n-doped electron transport layer[J]. SYNTHETIC METALS,2008,158:810-814.
APA	Ma, J. W.[1],Xu, Wei[2],Jiang, X. Y.[3],&Zhang, Z. L.[4].(2008).Organic light-emitting diodes based on new n-doped electron transport layer.SYNTHETIC METALS,158,810-814.
MLA	Ma, J. W.[1],et al."Organic light-emitting diodes based on new n-doped electron transport layer".SYNTHETIC METALS 158(2008):810-814.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。