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	Effect of LaNiO3 Sol concentration on the structure and dielectric properties of Pb(Zr0.53Ti0.47)O-3 thin films grown on LaNiO3 coated Ti substrates - art. no. 69842C
	Yang, Xiaoyan[1]; Cheng, Jinrong[2]; Yu, Shengwen[3]; Meng, Zhongyan[4]
	2008
会议名称	THIN FILM PHYSICS AND APPLICATIONS, SIXTH INTERNATIONAL CONFERENCE
会议日期	2007-09-25
关键词	PZT thin films LNO buffer layer sol concentration Ti substrates
页码	C9842-C9842
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2346002
专题	上海大学
作者单位	1.[1]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 2.[2]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 3.[3]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 4.[4]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Yang, Xiaoyan[1],Cheng, Jinrong[2],Yu, Shengwen[3],et al. Effect of LaNiO3 Sol concentration on the structure and dielectric properties of Pb(Zr0.53Ti0.47)O-3 thin films grown on LaNiO3 coated Ti substrates - art. no. 69842C[C]. 见:THIN FILM PHYSICS AND APPLICATIONS, SIXTH INTERNATIONAL CONFERENCE. 2007-09-25.

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