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A simple and effective route to annihilate defects in nanocrystalline SnO2 thin films prepared by pulsed laser deposition
Chen, Z.W.[1]; Wu, C.M.L.[2]; Shek, C.H.[3]; Lai, J.K.L.[4]; Jiao, Z.[5]; Wu, M.H.[6]
2008
会议名称2007 MRS Fall Meeting
会议日期2007-11-26
页码48-65
URL标识查看原文
内容类型会议论文
URI标识http://www.corc.org.cn/handle/1471x/2345772
专题上海大学
作者单位[1]Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong |Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai University, Shanghai, 200444, China[2]Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong [3]Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong [4]Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong [5]Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai University, Shanghai, 200444, China[6]Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai University, Shanghai, 200444, China
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Chen, Z.W.[1],Wu, C.M.L.[2],Shek, C.H.[3],et al. A simple and effective route to annihilate defects in nanocrystalline SnO2 thin films prepared by pulsed laser deposition[C]. 见:2007 MRS Fall Meeting. 2007-11-26.
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