Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN

	Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN
	Du, Guotong; Li, Mo; Zhang, Yuantao; Liang, Feng; Zhao, Degang; Jiang, Desheng; Liu, Zongshun; Zhu, Jianjun; Chen, Ping; Yang, Jing
刊名	NANOMATERIALS
	2018
其他题名	Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/6298]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
作者单位	中国科学院苏州纳米技术与纳米仿生研究所
推荐引用方式 GB/T 7714	Du, Guotong,Li, Mo,Zhang, Yuantao,et al. Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN[J]. NANOMATERIALS,2018.
APA	Du, Guotong.,Li, Mo.,Zhang, Yuantao.,Liang, Feng.,Zhao, Degang.,...&Zhang, Liqun.(2018).Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN.NANOMATERIALS.
MLA	Du, Guotong,et al."Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN".NANOMATERIALS (2018).