The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells

	The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells
	Yang, J.; Liu, S.T.; Du, G.T.; Zhang, Y.T.; Li, M.; Wang, W.J.; Zhang, L.Q.(张立群); Peng, L.Y.; Xing, Y.; Liu, W.
刊名	Optical Materials
	2018
其他题名	The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/6184]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
作者单位	中国科学院苏州纳米技术与纳米仿生研究所
推荐引用方式 GB/T 7714	Yang, J.,Liu, S.T.,Du, G.T.,et al. The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells[J]. Optical Materials,2018.
APA	Yang, J..,Liu, S.T..,Du, G.T..,Zhang, Y.T..,Li, M..,...&Zhao, D.G..(2018).The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells.Optical Materials.
MLA	Yang, J.,et al."The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells".Optical Materials (2018).