High f(T) AlGa(In)N/GaN HEMTs Grown on Si With a Low Gate Leakage and a High ON/OFF Current Ratio

	High f(T) AlGa(In)N/GaN HEMTs Grown on Si With a Low Gate Leakage and a High ON/OFF Current Ratio
	Zhu, Guangrun; Gao, Hongwei(高宏伟); Sun, Qian(孙钱); Chen, Tangsheng; Yang, Hui(杨辉); Dai, Shujun(戴淑君); Zhou, Yu(周宇); Zhong, Yaozong(钟耀宗); Zhang, Kai(张凯)
刊名	IEEE ELECTRON DEVICE LETTERS
	2018
其他题名	High f(T) AlGa(In)N/GaN HEMTs Grown on Si With a Low Gate Leakage and a High ON/OFF Current Ratio
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/6123]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_孙钱团队
作者单位	中国科学院苏州纳米技术与纳米仿生研究所
推荐引用方式 GB/T 7714	Zhu, Guangrun,Gao, Hongwei,Sun, Qian,et al. High f(T) AlGa(In)N/GaN HEMTs Grown on Si With a Low Gate Leakage and a High ON/OFF Current Ratio[J]. IEEE ELECTRON DEVICE LETTERS,2018.
APA	Zhu, Guangrun.,Gao, Hongwei.,Sun, Qian.,Chen, Tangsheng.,Yang, Hui.,...&Zhang, Kai.(2018).High f(T) AlGa(In)N/GaN HEMTs Grown on Si With a Low Gate Leakage and a High ON/OFF Current Ratio.IEEE ELECTRON DEVICE LETTERS.
MLA	Zhu, Guangrun,et al."High f(T) AlGa(In)N/GaN HEMTs Grown on Si With a Low Gate Leakage and a High ON/OFF Current Ratio".IEEE ELECTRON DEVICE LETTERS (2018).