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	High-performance organic field-effect transistors based on copper/copper sulphide bilayer source-drain electrodes
	Gu, Wen[1]; Jin, Weipeng[2]; Wei, Bin[3]; Zhang, Jianhua[4]; Wang, Jun[5]
刊名	APPLIED PHYSICS LETTERS
	2010
卷号	97
ISSN号	0003-6951
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2311135
专题	上海大学
作者单位	1.[1]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China. 2.[2]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China. 3.[3]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China. 4.[4]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China. 5.[5]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Gu, Wen[1],Jin, Weipeng[2],Wei, Bin[3],et al. High-performance organic field-effect transistors based on copper/copper sulphide bilayer source-drain electrodes[J]. APPLIED PHYSICS LETTERS,2010,97.
APA	Gu, Wen[1],Jin, Weipeng[2],Wei, Bin[3],Zhang, Jianhua[4],&Wang, Jun[5].(2010).High-performance organic field-effect transistors based on copper/copper sulphide bilayer source-drain electrodes.APPLIED PHYSICS LETTERS,97.
MLA	Gu, Wen[1],et al."High-performance organic field-effect transistors based on copper/copper sulphide bilayer source-drain electrodes".APPLIED PHYSICS LETTERS 97(2010).

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