QQ客服 官方微博 反馈留言

	Low-voltage-drive and high output current ZnO thin-film transistors with sputtering SiO2 as gate insulator
	Zhang, L.[1]; Li, J.[2]; Zhang, X. W.[3]; Yu, D. B.[4]; Khizar-ul-Haq, H. P. Lin[5]; Jiang, X. Y.[6]; Zhang, Z. L.[7]
刊名	CURRENT APPLIED PHYSICS
	2010
卷号	10页码:1306-1308
关键词	ZnO-TFT Low-drive-voltage High output current C-V characteristics
ISSN号	1567-1739
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2310477
专题	上海大学
作者单位	1.[1]Shanghai Univ, Dept Mat Sci, Shanghai 200072, Peoples R China. 2.Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 3.[2]Shanghai Univ, Dept Mat Sci, Shanghai 200072, Peoples R China. 4.[3]Shanghai Univ, Dept Mat Sci, Shanghai 200072, Peoples R China. 5.[4]Shanghai Univ, Dept Mat Sci, Shanghai 200072, Peoples R China. 6.[5]Shanghai Univ, Dept Mat Sci, Shanghai 200072, Peoples R China. 7.[6]Shanghai Univ, Dept Mat Sci, Shanghai 200072, Peoples R China. 8.[7]Shanghai Univ, Dept Mat Sci, Shanghai 200072, Peoples R China. 9.Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Zhang, L.[1],Li, J.[2],Zhang, X. W.[3],et al. Low-voltage-drive and high output current ZnO thin-film transistors with sputtering SiO2 as gate insulator[J]. CURRENT APPLIED PHYSICS,2010,10:1306-1308.
APA	Zhang, L.[1].,Li, J.[2].,Zhang, X. W.[3].,Yu, D. B.[4].,Khizar-ul-Haq, H. P. Lin[5].,...&Zhang, Z. L.[7].(2010).Low-voltage-drive and high output current ZnO thin-film transistors with sputtering SiO2 as gate insulator.CURRENT APPLIED PHYSICS,10,1306-1308.
MLA	Zhang, L.[1],et al."Low-voltage-drive and high output current ZnO thin-film transistors with sputtering SiO2 as gate insulator".CURRENT APPLIED PHYSICS 10(2010):1306-1308.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。