The relationship between hydrogen atoms and photoluminescent properties of porous silicon prepared by different etching time | |
Zhao, Yue[1]; Lv, Zhiyong[2]; Li, Zhao[3]; Liang, Xiaoyan[4]; Min, Jiahua[5]; Wang, Linjun[6]; Shi, Weimin[7]; Liu, Yongyue[8] | |
刊名 | SOLID-STATE ELECTRONICS
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2010 | |
卷号 | 54页码:452-456 |
关键词 | Porous silicon Photoluminescence mu-PCD measurements |
ISSN号 | 0038-1101 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2310108 |
专题 | 上海大学 |
作者单位 | 1.[1]Shanghai Univ, Shanghai Leading Acad Disciplines, Dept Elect Informat Mat, Shanghai 200072, Peoples R China. 2.[2]Shanghai Univ, Shanghai Leading Acad Disciplines, Dept Elect Informat Mat, Shanghai 200072, Peoples R China. 3.[3]Shanghai Univ, Shanghai Leading Acad Disciplines, Dept Elect Informat Mat, Shanghai 200072, Peoples R China. 4.[4]Shanghai Univ, Shanghai Leading Acad Disciplines, Dept Elect Informat Mat, Shanghai 200072, Peoples R China. 5.[5]Shanghai Univ, Shanghai Leading Acad Disciplines, Dept Elect Informat Mat, Shanghai 200072, Peoples R China. 6.[6]Shanghai Univ, Shanghai Leading Acad Disciplines, Dept Elect Informat Mat, Shanghai 200072, Peoples R China. 7.[7]Shanghai Univ, Shanghai Leading Acad Disciplines, Dept Elect Informat Mat, Shanghai 200072, Peoples R China. 8.[8]Ningbo Heli Mould Technol Shareholding Co Ltd, Ningbo 315700, Zhejiang, Peoples R China. |
推荐引用方式 GB/T 7714 | Zhao, Yue[1],Lv, Zhiyong[2],Li, Zhao[3],et al. The relationship between hydrogen atoms and photoluminescent properties of porous silicon prepared by different etching time[J]. SOLID-STATE ELECTRONICS,2010,54:452-456. |
APA | Zhao, Yue[1].,Lv, Zhiyong[2].,Li, Zhao[3].,Liang, Xiaoyan[4].,Min, Jiahua[5].,...&Liu, Yongyue[8].(2010).The relationship between hydrogen atoms and photoluminescent properties of porous silicon prepared by different etching time.SOLID-STATE ELECTRONICS,54,452-456. |
MLA | Zhao, Yue[1],et al."The relationship between hydrogen atoms and photoluminescent properties of porous silicon prepared by different etching time".SOLID-STATE ELECTRONICS 54(2010):452-456. |
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