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The relationship between hydrogen atoms and photoluminescent properties of porous silicon prepared by different etching time
Zhao, Yue[1]; Lv, Zhiyong[2]; Li, Zhao[3]; Liang, Xiaoyan[4]; Min, Jiahua[5]; Wang, Linjun[6]; Shi, Weimin[7]; Liu, Yongyue[8]
刊名SOLID-STATE ELECTRONICS
2010
卷号54页码:452-456
关键词Porous silicon Photoluminescence mu-PCD measurements
ISSN号0038-1101
URL标识查看原文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2310108
专题上海大学
作者单位1.[1]Shanghai Univ, Shanghai Leading Acad Disciplines, Dept Elect Informat Mat, Shanghai 200072, Peoples R China.
2.[2]Shanghai Univ, Shanghai Leading Acad Disciplines, Dept Elect Informat Mat, Shanghai 200072, Peoples R China.
3.[3]Shanghai Univ, Shanghai Leading Acad Disciplines, Dept Elect Informat Mat, Shanghai 200072, Peoples R China.
4.[4]Shanghai Univ, Shanghai Leading Acad Disciplines, Dept Elect Informat Mat, Shanghai 200072, Peoples R China.
5.[5]Shanghai Univ, Shanghai Leading Acad Disciplines, Dept Elect Informat Mat, Shanghai 200072, Peoples R China.
6.[6]Shanghai Univ, Shanghai Leading Acad Disciplines, Dept Elect Informat Mat, Shanghai 200072, Peoples R China.
7.[7]Shanghai Univ, Shanghai Leading Acad Disciplines, Dept Elect Informat Mat, Shanghai 200072, Peoples R China.
8.[8]Ningbo Heli Mould Technol Shareholding Co Ltd, Ningbo 315700, Zhejiang, Peoples R China.
推荐引用方式
GB/T 7714
Zhao, Yue[1],Lv, Zhiyong[2],Li, Zhao[3],et al. The relationship between hydrogen atoms and photoluminescent properties of porous silicon prepared by different etching time[J]. SOLID-STATE ELECTRONICS,2010,54:452-456.
APA Zhao, Yue[1].,Lv, Zhiyong[2].,Li, Zhao[3].,Liang, Xiaoyan[4].,Min, Jiahua[5].,...&Liu, Yongyue[8].(2010).The relationship between hydrogen atoms and photoluminescent properties of porous silicon prepared by different etching time.SOLID-STATE ELECTRONICS,54,452-456.
MLA Zhao, Yue[1],et al."The relationship between hydrogen atoms and photoluminescent properties of porous silicon prepared by different etching time".SOLID-STATE ELECTRONICS 54(2010):452-456.
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