Preparation and characterization of (110) diamond films used for field-effect transistors | |
Zhang, Fengjuan[1]; Zeng, Qingkai[2]; Pan, Xiaoyu[3]; Bi, Mei[4]; Yan, Xingmao[5]; Huang, Jian[6]; Tang, Ke[7]; Zhang, Jijun[8]; Wang, Linjun[9] | |
2011 | |
会议名称 | SEVENTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS |
会议日期 | 2010-09-24 |
关键词 | Diamond film HFCVD Hydrogen-terminated Grain orientation |
URL标识 | 查看原文 |
内容类型 | 会议论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2307414 |
专题 | 上海大学 |
作者单位 | 1.[1]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 2.[2]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 3.[3]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 4.[4]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 5.[5]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 6.[6]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 7.[7]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 8.[8]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 9.[9]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. |
推荐引用方式 GB/T 7714 | Zhang, Fengjuan[1],Zeng, Qingkai[2],Pan, Xiaoyu[3],et al. Preparation and characterization of (110) diamond films used for field-effect transistors[C]. 见:SEVENTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS. 2010-09-24. |
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