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	Realization of higher current density in the solar cell of SINP architecture
	Ma, Z. Q.[1]; He, B.[2]; Li, F.[3]; Shen, L.[4]; Xu, F.[5]
	2011
会议名称	SOLAR ENERGY MATERIALS AND SOLAR CELLS
会议日期	2011-01-01
关键词	SINP cell Higher short-circuit current density Ultraviolet response
页码	89-92
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2300985
专题	上海大学
作者单位	1.[1]Shanghai Univ, Dept Phys, SHU SolarE Lab, Shanghai 200444, Peoples R China. 2.[2]Shanghai Univ, Dept Phys, SHU SolarE Lab, Shanghai 200444, Peoples R China. 3.[3]Shanghai Univ, Dept Phys, SHU SolarE Lab, Shanghai 200444, Peoples R China. 4.[4]Shanghai Univ, Dept Phys, SHU SolarE Lab, Shanghai 200444, Peoples R China. 5.[5]Shanghai Univ, Dept Phys, SHU SolarE Lab, Shanghai 200444, Peoples R China.
推荐引用方式 GB/T 7714	Ma, Z. Q.[1],He, B.[2],Li, F.[3],et al. Realization of higher current density in the solar cell of SINP architecture[C]. 见:SOLAR ENERGY MATERIALS AND SOLAR CELLS. 2011-01-01.

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