Reliability evaluation of GaN based light-emitting diodes under high-temperature stressing | |
Fu, Meijuan[1]; Yin, Luqiao[2]; Weng, Fei[3]; Yang, Lianqiao[4]; Zhang, Jianhua[5] | |
2012 | |
会议名称 | 2012 13TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY & HIGH DENSITY PACKAGING (ICEPT-HDP 2012) |
会议日期 | 2012-08-13 |
页码 | 1263-1266 |
URL标识 | 查看原文 |
内容类型 | 会议论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2299580 |
专题 | 上海大学 |
作者单位 | Shanghai Univ, Dept Mat Sci & Engn, Shanghai 200072, Peoples R China. |
推荐引用方式 GB/T 7714 | Fu, Meijuan[1],Yin, Luqiao[2],Weng, Fei[3],et al. Reliability evaluation of GaN based light-emitting diodes under high-temperature stressing[C]. 见:2012 13TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY & HIGH DENSITY PACKAGING (ICEPT-HDP 2012). 2012-08-13. |
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