| Reliability evaluation of GaN based light-emitting diodes under high-temperature stressing | |
| Fu, Meijuan[1]; Yin, Luqiao[2]; Weng, Fei[3]; Yang, Lianqiao[4]; Zhang, Jianhua[5] | |
| 2012 | |
| 会议名称 | 2012 13TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY & HIGH DENSITY PACKAGING (ICEPT-HDP 2012) |
| 会议日期 | 2012-08-13 |
| 页码 | 1263-1266 |
| URL标识 | 查看原文 |
| 内容类型 | 会议论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2299580 |
| 专题 | 上海大学 |
| 作者单位 | Shanghai Univ, Dept Mat Sci & Engn, Shanghai 200072, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Fu, Meijuan[1],Yin, Luqiao[2],Weng, Fei[3],et al. Reliability evaluation of GaN based light-emitting diodes under high-temperature stressing[C]. 见:2012 13TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY & HIGH DENSITY PACKAGING (ICEPT-HDP 2012). 2012-08-13. |
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