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	A threshold voltage simulation of hydrogen-terminated diamond MESFETs
	Zhuang, Xiaofeng[1]; Zeng, Qingkai[2]; Ren, Bing[3]; Wang, Zhenhua[4]; Zhang, Yuelu[5]; Shen, Liya[6]; Bi, Mei[7]; Huang, Jian[8]; Tang, Ke[9]; Shi, Lingyun[10]
	2012
会议名称	ADVANCED COMPOSITE MATERIALS, PTS 1-3
会议日期	2012-03-27
关键词	threshold voltage diamond hydrogen-terminated Silvaco TCAD
页码	1093-1096
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2298563
专题	上海大学
作者单位	1.[1]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 2.[2]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 3.[3]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 4.[4]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 5.[5]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 6.[6]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 7.[7]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 8.[8]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 9.[9]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 10.[10]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Zhuang, Xiaofeng[1],Zeng, Qingkai[2],Ren, Bing[3],et al. A threshold voltage simulation of hydrogen-terminated diamond MESFETs[C]. 见:ADVANCED COMPOSITE MATERIALS, PTS 1-3. 2012-03-27.

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