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	Thin film poly-crystalline silicon fabrication based on Rapid Thermal Annealing (RTA) process
	Qian, Jun[1]; Li, Jirong[2]; Liao, Yang[3]; Shi, Weimin[4]; Kuang, Huahui[5]; Ming, Xiuchun[6]; Liu, Jin[7]; Jin, Jing[8]; Qin, Juan[9]
	2013
会议名称	EIGHTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS
会议日期	2013-09-20
关键词	Amorphous Si aluminum-induced crystallization RTA (Rapid Thermal Annealing)
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2290212
专题	上海大学
作者单位	1.[1]Shanghai Univ, Shanghai, Peoples R China. 2.[2]Shanghai Univ, Shanghai, Peoples R China. 3.[3]Shanghai Univ, Shanghai, Peoples R China. 4.[4]Shanghai Univ, Shanghai, Peoples R China. 5.[5]Shanghai Univ, Shanghai, Peoples R China. 6.[6]Shanghai Univ, Shanghai, Peoples R China. 7.[7]Shanghai Univ, Shanghai, Peoples R China. 8.[8]Shanghai Univ, Shanghai, Peoples R China. 9.[9]Shanghai Univ, Shanghai, Peoples R China.
推荐引用方式 GB/T 7714	Qian, Jun[1],Li, Jirong[2],Liao, Yang[3],et al. Thin film poly-crystalline silicon fabrication based on Rapid Thermal Annealing (RTA) process[C]. 见:EIGHTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS. 2013-09-20.

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