Thin film poly-crystalline silicon fabrication based on Rapid Thermal Annealing (RTA) process | |
Qian, Jun[1]; Li, Jirong[2]; Liao, Yang[3]; Shi, Weimin[4]; Kuang, Huahui[5]; Ming, Xiuchun[6]; Liu, Jin[7]; Jin, Jing[8]; Qin, Juan[9] | |
2013 | |
会议名称 | EIGHTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS |
会议日期 | 2013-09-20 |
关键词 | Amorphous Si aluminum-induced crystallization RTA (Rapid Thermal Annealing) |
URL标识 | 查看原文 |
内容类型 | 会议论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2290212 |
专题 | 上海大学 |
作者单位 | 1.[1]Shanghai Univ, Shanghai, Peoples R China. 2.[2]Shanghai Univ, Shanghai, Peoples R China. 3.[3]Shanghai Univ, Shanghai, Peoples R China. 4.[4]Shanghai Univ, Shanghai, Peoples R China. 5.[5]Shanghai Univ, Shanghai, Peoples R China. 6.[6]Shanghai Univ, Shanghai, Peoples R China. 7.[7]Shanghai Univ, Shanghai, Peoples R China. 8.[8]Shanghai Univ, Shanghai, Peoples R China. 9.[9]Shanghai Univ, Shanghai, Peoples R China. |
推荐引用方式 GB/T 7714 | Qian, Jun[1],Li, Jirong[2],Liao, Yang[3],et al. Thin film poly-crystalline silicon fabrication based on Rapid Thermal Annealing (RTA) process[C]. 见:EIGHTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS. 2013-09-20. |
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