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	A novel ITO/AZO/SiO2/p-Si frame SIS heterojunction fabricated by magnetron sputtering
	He, Bo[1]; Wang, HongZhi[2]; Li, YaoGang[3]; Ma, ZhongQuan[4]; Xu, Jing[5]; Zhang, QingHong[6]; Wang, ChunRui[7]; Xing, HuaiZhong[8]; Zhao, Lei[9]; Rui, YiChuan[10]
刊名	JOURNAL OF ALLOYS AND COMPOUNDS
	2013
卷号	581页码:28-34
关键词	Indium tin oxide (ITO) Al-doped ZnO (AZO) Magnetron sputtering SIS heterojunction Current-voltage (I-V) characteristics
ISSN号	0925-8388
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2289483
专题	上海大学
作者单位	1.[1]Donghua Univ, Dept Appl Phys, Shanghai 201620, Peoples R China.,Donghua Univ, State Key Lab Modificat Chem Fibers & Polymer Mat, Shanghai 201620, Peoples R China. 2.[2]Donghua Univ, Dept Appl Phys, Shanghai 201620, Peoples R China.,Donghua Univ, State Key Lab Modificat Chem Fibers & Polymer Mat, Shanghai 201620, Peoples R China. 3.[3]Donghua Univ, Dept Appl Phys, Shanghai 201620, Peoples R China.,Donghua Univ, State Key Lab Modificat Chem Fibers & Polymer Mat, Shanghai 201620, Peoples R China. 4.[4]Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China. 5.[5]Shanghai Univ, Instrumental Anal & Res Ctr, Shanghai 200444, Peoples R China. 6.[6]Donghua Univ, Dept Appl Phys, Shanghai 201620, Peoples R China.,Donghua Univ, State Key Lab Modificat Chem Fibers & Polymer Mat, Shanghai 201620, Peoples R China. 7.[7]Donghua Univ, Dept Appl Phys, Shanghai 201620, Peoples R China.,Donghua Univ, State Key Lab Modificat Chem Fibers & Polymer Mat, Shanghai 201620, Peoples R China. 8.[8]Donghua Univ, Dept Appl Phys, Shanghai 201620, Peoples R China.,Donghua Univ, State Key Lab Modificat Chem Fibers & Polymer Mat, Shanghai 201620, Peoples R China. 9.[9]Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China. 10.[10]Donghua Univ, Dept Appl Phys, Shanghai 201620, Peoples R China.,Donghua Univ, State Key Lab Modificat Chem Fibers & Polymer Mat, Shanghai 201620, Peoples R China.
推荐引用方式 GB/T 7714	He, Bo[1],Wang, HongZhi[2],Li, YaoGang[3],et al. A novel ITO/AZO/SiO2/p-Si frame SIS heterojunction fabricated by magnetron sputtering[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2013,581:28-34.
APA	He, Bo[1].,Wang, HongZhi[2].,Li, YaoGang[3].,Ma, ZhongQuan[4].,Xu, Jing[5].,...&Rui, YiChuan[10].(2013).A novel ITO/AZO/SiO2/p-Si frame SIS heterojunction fabricated by magnetron sputtering.JOURNAL OF ALLOYS AND COMPOUNDS,581,28-34.
MLA	He, Bo[1],et al."A novel ITO/AZO/SiO2/p-Si frame SIS heterojunction fabricated by magnetron sputtering".JOURNAL OF ALLOYS AND COMPOUNDS 581(2013):28-34.

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