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	Optical, scintillation properties and defect study of Gd2Si2O7:Ce single crystal grown by floating zone method
	Feng, He[1]; Xu, Wusheng[2]; Ren, Guohao[3]; Yang, Qiuhong[4]; Xie, Jianjun[5]; Xu, Jun[6]; Xu, Jiayue[7]
刊名	PHYSICA B-CONDENSED MATTER
	2013
卷号	411页码:114-117
关键词	Gd2Si2O7:Ce Single crystal Optical properties Thermally stimulated luminescence Defects
ISSN号	0921-4526
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2287037
专题	上海大学
作者单位	1.School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China 2.Functional Materials Lab, GE Global Research, Shanghai 201203, China 3.Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai 201800, China 4.School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418, China
推荐引用方式 GB/T 7714	Feng, He[1],Xu, Wusheng[2],Ren, Guohao[3],et al. Optical, scintillation properties and defect study of Gd2Si2O7:Ce single crystal grown by floating zone method[J]. PHYSICA B-CONDENSED MATTER,2013,411:114-117.
APA	Feng, He[1].,Xu, Wusheng[2].,Ren, Guohao[3].,Yang, Qiuhong[4].,Xie, Jianjun[5].,...&Xu, Jiayue[7].(2013).Optical, scintillation properties and defect study of Gd2Si2O7:Ce single crystal grown by floating zone method.PHYSICA B-CONDENSED MATTER,411,114-117.
MLA	Feng, He[1],et al."Optical, scintillation properties and defect study of Gd2Si2O7:Ce single crystal grown by floating zone method".PHYSICA B-CONDENSED MATTER 411(2013):114-117.

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