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Growth and characterization of Sb2Te3 thin film deposited by pulsed laser method
Liu, Tantan[1]; Deng, Hongmei[2]; Yang, Pingxiong[3]; Zhang, Jun[4]; Cao, Huiyi[5]; He, Jun[6]; Chu, Junhao[7]
2013
会议名称8th International Conference on Thin Film Physics and Applications, TFPA 2013
会议日期2013-09-20
URL标识查看原文
内容类型会议论文
URI标识http://www.corc.org.cn/handle/1471x/2286957
专题上海大学
作者单位[1]Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China [2]Instrumental Analysis and Research Center, Institute of Materials, Shanghai University, 99 Shangda Road, Shanghai 200444, China[3]Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China [4]Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China [5]Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China [6]Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China [7]Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China
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GB/T 7714
Liu, Tantan[1],Deng, Hongmei[2],Yang, Pingxiong[3],et al. Growth and characterization of Sb2Te3 thin film deposited by pulsed laser method[C]. 见:8th International Conference on Thin Film Physics and Applications, TFPA 2013. 2013-09-20.
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