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	Controlled growth of graphene on Ru(0001): from nanographene to multilayer graphene
	Fu Q(傅强) ; Cui Y(崔义) ; Zhang H(张辉) ; Bao XH(包信和)
	2010-08-23
会议名称	18th international vacuum congress
会议日期	2010-8-23
会议地点	中国
页码	-/2
通讯作者	傅强
中文摘要	both fundamental research and potential applications of graphene are calling for the controllable synthesis of this new two-dimensional (2d) carbon material. here, we present the synthesis of graphene with controlled lateral size and thickness via epitaxial growth on ru(0001). either ethylene (c2h4) or coronene (c24h12) was used as the precursors for graphene growth. the mechanism of how 2d graphene overlayers evolve from the hydrocarbon precursors was investigated by high resolution electron energy loss spectroscopy (hreels), scanning tunneling microscopy (stm) and photoemission electron microscopy (peem). we found that identical-size graphene nanoclusters with the 3-c6 ring (c24 cluster) and 7-c6 ring (c13 cluster) structures form on ru(0001) after pyrolysis of both c2h4 and c24h12 at elevated temperatures (around 900 k). the nanographene presents dome shape because of the stronger interaction of the edge carbon atoms with surface ru atoms than those in the center of the cluster. the nanographene can be regarded as building blocks, and large size graphene structures form through coalescence of these graphene nanoflakes. via controlling of growth temperature, well-defined graphene overlayers ranging from nanographene to millimeter sized continuous graphene films have been obtained [1,2]. besides the lateral size of graphene layer, thickness is another important structural character of graphene. the growth of multilayer graphene was attempted on ru(0001) surface. in-situ low energy electron microscopy (leem) and peem investigations indicate that single layer graphene forms on bare ru(0001) via the surface segregation of carbon, and the second layer starts to appear after the completion of the first layer. the topmost surface of the multilayer graphene is physically continuous as indicated by the stm images. accordingly, a bottom-up growth mechanism, in which the newly formed graphene layer locates underneath the previously formed graphene layer rather than on its top, was proposed for graphene growth on metal surfaces through the surface segregation route. [3,4]. 1. hui zhang, qiang fu, yi cui, dali tan, xinhe bao, “growth mechanism of graphene on ru(0001) and o2 adsorption on the graphene/ru(0001) surface”, journal of physical chemistry c 113 (2009) 8296-8301. 2. yi cui, qiang fu, hui zhang, dali tan, xinhe bao, “dynamic characterization of graphene growth and etching by oxygen on ru(0001) by peem”, journal of physical chemistry c 113 (2009) 20365-20370. 3. yi cui, qiang fu, xinhe bao, “dynamic observation of layer-by-layer growth and removal of graphene on ru(0001)”, physical chemistry chemical physics (in press) 4. yi cui, qiang fu, dali tan, xinhe bao, “temperature dependence of the formation graphene and subsurface carbon on ru(0001) and its effect on surface reactivity”, chemphyschem. 10.1002/cphc.200901034.
会议主办者	中国真空学会
学科主题	物理化学
语种	中文
内容类型	会议论文
源URL	[http://159.226.238.44/handle/321008/114306]
专题	大连化学物理研究所_中国科学院大连化学物理研究所
推荐引用方式 GB/T 7714	Fu Q,Cui Y,Zhang H,et al. Controlled growth of graphene on Ru(0001): from nanographene to multilayer graphene[C]. 见:18th international vacuum congress. 中国. 2010-8-23.

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