QQ客服 官方微博 反馈留言

	A strategy for performance enhancement of HfInZnO thin film transistors using a double-active-layer structure
	Li, Jun[1]; Zhang, Jian-Hua[2]; Dinga, Xing-Wei[3]; Zhu, Wen-Qing[4]; Jiang, Xue-Yin[5]; Zhang, Zhi-Lin[6]
刊名	THIN SOLID FILMS
	2014
卷号	562页码:592-596
关键词	Hafnium-indium zinc oxide Oxide thin film transistors Oxygen Double active layer
ISSN号	0040-6090
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2275899
专题	上海大学
作者单位	1.[1]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 2.Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 3.[2]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 4.[3]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 5.[4]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 6.Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 7.[5]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 8.[6]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 9.Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Li, Jun[1],Zhang, Jian-Hua[2],Dinga, Xing-Wei[3],et al. A strategy for performance enhancement of HfInZnO thin film transistors using a double-active-layer structure[J]. THIN SOLID FILMS,2014,562:592-596.
APA	Li, Jun[1],Zhang, Jian-Hua[2],Dinga, Xing-Wei[3],Zhu, Wen-Qing[4],Jiang, Xue-Yin[5],&Zhang, Zhi-Lin[6].(2014).A strategy for performance enhancement of HfInZnO thin film transistors using a double-active-layer structure.THIN SOLID FILMS,562,592-596.
MLA	Li, Jun[1],et al."A strategy for performance enhancement of HfInZnO thin film transistors using a double-active-layer structure".THIN SOLID FILMS 562(2014):592-596.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。