Effect of Doping with Substituent Bi Atoms on the Electrical Transport Properties of a Bi0.4Sb1.6Te3 Film Fabricated by Molecular Beam Epitaxy | |
Wang, Zhichong[1]; Zhang, Xiangpeng[2]; Wu, Yigui[3]; Hu, Zhiyu[4] | |
刊名 | JOURNAL OF ELECTRONIC MATERIALS
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2015 | |
卷号 | 44页码:3334-3340 |
关键词 | Bi0.4Sb1.6Te3 thin film electrical properties molecular beam epitaxy doping |
ISSN号 | 0361-5235 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2268114 |
专题 | 上海大学 |
作者单位 | 1.[1]Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China.,Shanghai Univ, Inst NanoMicroEnergy, Shanghai 200444, Peoples R China. 2.[2]Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China.,Shanghai Univ, Inst NanoMicroEnergy, Shanghai 200444, Peoples R China. 3.[3]Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China.,Shanghai Univ, Inst NanoMicroEnergy, Shanghai 200444, Peoples R China. 4.[4]Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China.,Shanghai Univ, Inst NanoMicroEnergy, Shanghai 200444, Peoples R China. 5.Shanghai Jiao Tong Univ, Natl Key Lab Sci & Technol Micro Nano Fabricat, Shanghai 200240, Peoples R China. |
推荐引用方式 GB/T 7714 | Wang, Zhichong[1],Zhang, Xiangpeng[2],Wu, Yigui[3],et al. Effect of Doping with Substituent Bi Atoms on the Electrical Transport Properties of a Bi0.4Sb1.6Te3 Film Fabricated by Molecular Beam Epitaxy[J]. JOURNAL OF ELECTRONIC MATERIALS,2015,44:3334-3340. |
APA | Wang, Zhichong[1],Zhang, Xiangpeng[2],Wu, Yigui[3],&Hu, Zhiyu[4].(2015).Effect of Doping with Substituent Bi Atoms on the Electrical Transport Properties of a Bi0.4Sb1.6Te3 Film Fabricated by Molecular Beam Epitaxy.JOURNAL OF ELECTRONIC MATERIALS,44,3334-3340. |
MLA | Wang, Zhichong[1],et al."Effect of Doping with Substituent Bi Atoms on the Electrical Transport Properties of a Bi0.4Sb1.6Te3 Film Fabricated by Molecular Beam Epitaxy".JOURNAL OF ELECTRONIC MATERIALS 44(2015):3334-3340. |
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