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	Effect of Doping with Substituent Bi Atoms on the Electrical Transport Properties of a Bi0.4Sb1.6Te3 Film Fabricated by Molecular Beam Epitaxy
	Wang, Zhichong[1]; Zhang, Xiangpeng[2]; Wu, Yigui[3]; Hu, Zhiyu[4]
刊名	JOURNAL OF ELECTRONIC MATERIALS
	2015
卷号	44页码:3334-3340
关键词	Bi0.4Sb1.6Te3 thin film electrical properties molecular beam epitaxy doping
ISSN号	0361-5235
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2268114
专题	上海大学
作者单位	1.[1]Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China.,Shanghai Univ, Inst NanoMicroEnergy, Shanghai 200444, Peoples R China. 2.[2]Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China.,Shanghai Univ, Inst NanoMicroEnergy, Shanghai 200444, Peoples R China. 3.[3]Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China.,Shanghai Univ, Inst NanoMicroEnergy, Shanghai 200444, Peoples R China. 4.[4]Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China.,Shanghai Univ, Inst NanoMicroEnergy, Shanghai 200444, Peoples R China. 5.Shanghai Jiao Tong Univ, Natl Key Lab Sci & Technol Micro Nano Fabricat, Shanghai 200240, Peoples R China.
推荐引用方式 GB/T 7714	Wang, Zhichong[1],Zhang, Xiangpeng[2],Wu, Yigui[3],et al. Effect of Doping with Substituent Bi Atoms on the Electrical Transport Properties of a Bi0.4Sb1.6Te3 Film Fabricated by Molecular Beam Epitaxy[J]. JOURNAL OF ELECTRONIC MATERIALS,2015,44:3334-3340.
APA	Wang, Zhichong[1],Zhang, Xiangpeng[2],Wu, Yigui[3],&Hu, Zhiyu[4].(2015).Effect of Doping with Substituent Bi Atoms on the Electrical Transport Properties of a Bi0.4Sb1.6Te3 Film Fabricated by Molecular Beam Epitaxy.JOURNAL OF ELECTRONIC MATERIALS,44,3334-3340.
MLA	Wang, Zhichong[1],et al."Effect of Doping with Substituent Bi Atoms on the Electrical Transport Properties of a Bi0.4Sb1.6Te3 Film Fabricated by Molecular Beam Epitaxy".JOURNAL OF ELECTRONIC MATERIALS 44(2015):3334-3340.

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