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	Origin of the improved stability under negative gate-bias illumination stress in various sputtering power fabricated ZnSnO TFTs
	Huang, Chuan-Xin[1]; Li, Jun[2]; Fu, Yi-Zhou[3]; Zhang, Jian-Hua[4]; Jiang, Xue-Yin[5]; Zhang, Zhi-Lin[6]
刊名	SUPERLATTICES AND MICROSTRUCTURES
	2015
卷号	88页码:426-433
关键词	ZnSnO TFTs rf sputtering power ALD Al2O3 Negative gate-bias illumination stability
ISSN号	0749-6036
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2266516
专题	上海大学
作者单位	1.[1]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 2.[2]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 3.Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China. 4.[3]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 5.[4]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China. 6.[5]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 7.[6]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 8.Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Huang, Chuan-Xin[1],Li, Jun[2],Fu, Yi-Zhou[3],et al. Origin of the improved stability under negative gate-bias illumination stress in various sputtering power fabricated ZnSnO TFTs[J]. SUPERLATTICES AND MICROSTRUCTURES,2015,88:426-433.
APA	Huang, Chuan-Xin[1],Li, Jun[2],Fu, Yi-Zhou[3],Zhang, Jian-Hua[4],Jiang, Xue-Yin[5],&Zhang, Zhi-Lin[6].(2015).Origin of the improved stability under negative gate-bias illumination stress in various sputtering power fabricated ZnSnO TFTs.SUPERLATTICES AND MICROSTRUCTURES,88,426-433.
MLA	Huang, Chuan-Xin[1],et al."Origin of the improved stability under negative gate-bias illumination stress in various sputtering power fabricated ZnSnO TFTs".SUPERLATTICES AND MICROSTRUCTURES 88(2015):426-433.

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