Enhancement of Electrical Properties of Nanostructured Polysilicon Layers Through Hydrogen Passivation | |
Zhou, D.[1]; Xu, T.[2]; Lambert, Y.[3]; Cristini-Robbe, O.[4]; Stievenard, D.[5] | |
刊名 | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
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2015 | |
卷号 | 15页码:9772-9776 |
关键词 | Nanostructured Surface Polysilicon Hydrogen Passivation |
ISSN号 | 1533-4880 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2266508 |
专题 | 上海大学 |
作者单位 | 1.[1]IEMN, UMR8520, Dept ISEN, F-59046 Lille, France. 2.[2]Shanghai Univ, Sinoeuropean Sch Technol, Shanghai 200444, Peoples R China. 3.[3]IEMN, UMR8520, Dept ISEN, F-59046 Lille, France. 4.[4]Univ Lille 1, UMR8523, PHLAM, F-59652 Villeneuve Dascq, France. 5.[5]IEMN, UMR8520, Dept ISEN, F-59046 Lille, France. |
推荐引用方式 GB/T 7714 | Zhou, D.[1],Xu, T.[2],Lambert, Y.[3],et al. Enhancement of Electrical Properties of Nanostructured Polysilicon Layers Through Hydrogen Passivation[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2015,15:9772-9776. |
APA | Zhou, D.[1],Xu, T.[2],Lambert, Y.[3],Cristini-Robbe, O.[4],&Stievenard, D.[5].(2015).Enhancement of Electrical Properties of Nanostructured Polysilicon Layers Through Hydrogen Passivation.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,15,9772-9776. |
MLA | Zhou, D.[1],et al."Enhancement of Electrical Properties of Nanostructured Polysilicon Layers Through Hydrogen Passivation".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 15(2015):9772-9776. |
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