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	Enhancement of Electrical Properties of Nanostructured Polysilicon Layers Through Hydrogen Passivation
	Zhou, D.[1]; Xu, T.[2]; Lambert, Y.[3]; Cristini-Robbe, O.[4]; Stievenard, D.[5]
刊名	JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
	2015
卷号	15页码:9772-9776
关键词	Nanostructured Surface Polysilicon Hydrogen Passivation
ISSN号	1533-4880
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2266508
专题	上海大学
作者单位	1.[1]IEMN, UMR8520, Dept ISEN, F-59046 Lille, France. 2.[2]Shanghai Univ, Sinoeuropean Sch Technol, Shanghai 200444, Peoples R China. 3.[3]IEMN, UMR8520, Dept ISEN, F-59046 Lille, France. 4.[4]Univ Lille 1, UMR8523, PHLAM, F-59652 Villeneuve Dascq, France. 5.[5]IEMN, UMR8520, Dept ISEN, F-59046 Lille, France.
推荐引用方式 GB/T 7714	Zhou, D.[1],Xu, T.[2],Lambert, Y.[3],et al. Enhancement of Electrical Properties of Nanostructured Polysilicon Layers Through Hydrogen Passivation[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2015,15:9772-9776.
APA	Zhou, D.[1],Xu, T.[2],Lambert, Y.[3],Cristini-Robbe, O.[4],&Stievenard, D.[5].(2015).Enhancement of Electrical Properties of Nanostructured Polysilicon Layers Through Hydrogen Passivation.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,15,9772-9776.
MLA	Zhou, D.[1],et al."Enhancement of Electrical Properties of Nanostructured Polysilicon Layers Through Hydrogen Passivation".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 15(2015):9772-9776.

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